화학공학소재연구정보센터
검색결과 : 268건
No. Article
11 Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition
Lee WC, Cho CJ, Park SI, Jun DH, Song JD, Hwang CS, Kim SK
Current Applied Physics, 18(8), 919, 2018
12 Growth temperature optimization of GaAs-based In0.83Ga0.17As on InxAl1-xAs buffers
Chen XY, Gu Y, Zhang YG, Ma YJ, Du B, Zhang J, Ji WY, Shi YH, Zhu Y
Journal of Crystal Growth, 488, 51, 2018
13 Growth and characterisation of MnSb(0001)/InGaAs(111)A epitaxial films
Mousley PJ, Burrows CW, Ashwin MJ, Sanchez AM, Lazarov VK, Bell GR
Journal of Crystal Growth, 498, 391, 2018
14 Influence of surface stoichiometry and quantum confinement on the electronic structure of small diameter InxGa1-xAs nanowires
Razavi P, Greer JC
Materials Chemistry and Physics, 206, 35, 2018
15 Investigation of nonlinear distortion in double heterojunction GaAs based pHEMT subject to frequency and temperature
Alim MA, Ali MM, Rezazadeh AA
Solid-State Electronics, 146, 44, 2018
16 Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
Zikova M, Hospodkova A, Pangrac J, Oswald J, Hulicius E
Journal of Crystal Growth, 464, 59, 2017
17 GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications
Vyskocil J, Hospodkova A, Petricek O, Pangrac J, Zikova M, Oswald J, Vetushka A
Journal of Crystal Growth, 464, 64, 2017
18 Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 - A comparative study
Hong M, Wan HW, Chang P, Lin TD, Chang YH, Lee WC, Pi TW, Kwo J
Journal of Crystal Growth, 477, 159, 2017
19 Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices
Richards RD, Mellor A, Harun F, Cheong JS, Hylton NP, Wilson T, Thomas T, Roberts JS, Ekins-Daukes NJ, David JPR
Solar Energy Materials and Solar Cells, 172, 238, 2017
20 Back-gated InGaAs-on-insulator lateral N+NN+ MOSFET: Fabrication and typical conduction mechanisms
Park HJ, Pirro L, Czornomaz L, Ionica I, Bawedin M, Djara V, Deshpande V, Cristoloveanu S
Solid-State Electronics, 128, 80, 2017