11 |
Si versus Ge for future microelectronics Claeys C, Mitard J, Eneman G, Meuris M, Simon E Thin Solid Films, 518(9), 2301, 2010 |
12 |
Characterization of gadolinium oxide film by pulse laser deposition Cheng XH, Xu DP, Song ZR, He DW, Yu YH, Zhao QT, Shen DS Applied Surface Science, 256(3), 921, 2009 |
13 |
Use of water vapor for suppressing the growth of unstable low-k interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness Xu JP, Zou X, Lai PT, Li CX, Chan CL Thin Solid Films, 517(9), 2892, 2009 |
14 |
Application of spectroscopic photoemission and low energy electron microscope to high-k gate dielectrics: Relationship between surface morphology and electronic states during Hf-silicide formation Yasuhara R, Taniuchi T, Kumigashira H, Oshima M, Guo F, Kinoshita T, Ono K, Ikeda K, Liu GL, Liu Z, Usuda K Applied Surface Science, 254(15), 4757, 2008 |
15 |
Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation Oh J, Majhi P, Tseng HH, Jammy R, Kelly DQ, Banedee SK, Campbell JC Thin Solid Films, 516(12), 4107, 2008 |
16 |
Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics Song ZR, Cheng XH, Zhang EX, Xing YM, Yu YH, Zhang ZX, Wang X, Shen DS Thin Solid Films, 517(1), 465, 2008 |
17 |
Optical and electrical properties of plasma-oxidation derived HfO2 gate dielectric films He G, Zhu LQ, Liu M, Fang Q, Zhang LD Applied Surface Science, 253(7), 3413, 2007 |
18 |
Structural and optical properties of nitrogen-incorporated HfO2 gate dielectrics deposited by reactive sputtering He G, Fang Q, Li GH, Zhang JP, Zhang LD Applied Surface Science, 253(20), 8483, 2007 |
19 |
Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks Gribelyuk MA, Cabral C, Gusev EP, Narayanan V Thin Solid Films, 515(13), 5308, 2007 |
20 |
Parameter extraction using novel phenomena in nano-MOSFETs with ultra-thin (EOT=0.46-1.93 nm) high-K gate dielectrics Kar S Thin Solid Films, 504(1-2), 178, 2006 |