화학공학소재연구정보센터
검색결과 : 27건
No. Article
11 Si versus Ge for future microelectronics
Claeys C, Mitard J, Eneman G, Meuris M, Simon E
Thin Solid Films, 518(9), 2301, 2010
12 Characterization of gadolinium oxide film by pulse laser deposition
Cheng XH, Xu DP, Song ZR, He DW, Yu YH, Zhao QT, Shen DS
Applied Surface Science, 256(3), 921, 2009
13 Use of water vapor for suppressing the growth of unstable low-k interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness
Xu JP, Zou X, Lai PT, Li CX, Chan CL
Thin Solid Films, 517(9), 2892, 2009
14 Application of spectroscopic photoemission and low energy electron microscope to high-k gate dielectrics: Relationship between surface morphology and electronic states during Hf-silicide formation
Yasuhara R, Taniuchi T, Kumigashira H, Oshima M, Guo F, Kinoshita T, Ono K, Ikeda K, Liu GL, Liu Z, Usuda K
Applied Surface Science, 254(15), 4757, 2008
15 Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation
Oh J, Majhi P, Tseng HH, Jammy R, Kelly DQ, Banedee SK, Campbell JC
Thin Solid Films, 516(12), 4107, 2008
16 Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics
Song ZR, Cheng XH, Zhang EX, Xing YM, Yu YH, Zhang ZX, Wang X, Shen DS
Thin Solid Films, 517(1), 465, 2008
17 Optical and electrical properties of plasma-oxidation derived HfO2 gate dielectric films
He G, Zhu LQ, Liu M, Fang Q, Zhang LD
Applied Surface Science, 253(7), 3413, 2007
18 Structural and optical properties of nitrogen-incorporated HfO2 gate dielectrics deposited by reactive sputtering
He G, Fang Q, Li GH, Zhang JP, Zhang LD
Applied Surface Science, 253(20), 8483, 2007
19 Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks
Gribelyuk MA, Cabral C, Gusev EP, Narayanan V
Thin Solid Films, 515(13), 5308, 2007
20 Parameter extraction using novel phenomena in nano-MOSFETs with ultra-thin (EOT=0.46-1.93 nm) high-K gate dielectrics
Kar S
Thin Solid Films, 504(1-2), 178, 2006