| 11 |
Two ways to achieve an anammox influent from real reject water treatment at lab-scale: Partial SBR nitrification and SHARON process
Gali A, Dosta J, van Loosdrecht MCM, Mata-Alvarez J
Process Biochemistry, 42(4), 715, 2007 |
| 12 |
Optimization of biological nitrogen removal via nitrite in a SBR treating supernatant from the anaerobic digestion of municipal solid wastes
Mace S, Dosta J, Gali A, Mata-Alvarez J
Industrial & Engineering Chemistry Research, 45(8), 2787, 2006 |
| 13 |
Biological nitrogen removal via nitrite of reject water with a SBR and chemostat SHARON/denitrification process
Gali A, Dosta J, van Loosdrecht MCM, Mata-Alvarez J
Industrial & Engineering Chemistry Research, 45(22), 7656, 2006 |
| 14 |
Use of hydrolyzed primary sludge as internal carbon source for denitrification in a SBR treating reject water via nitrite
Gali A, Dosta J, Mata-Alvarez J
Industrial & Engineering Chemistry Research, 45(22), 7661, 2006 |
| 15 |
Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC
Yan F, Devaty RP, Choyke WJ, Gali A, Schmid F, Pensl G, Wagner G
Materials Science Forum, 483, 493, 2005 |
| 16 |
Theoretical investigations of complexes of p-type dopants and carbon interstitial in SiC: bistable, negative-U defects
Gali A, Hornos T, Deak P, Son NT, Janzen E, Choyke WJ
Materials Science Forum, 483, 519, 2005 |
| 17 |
The search for near interface oxide traps - First-principles calculations on intrinsic SiO2 defects
Knaup JM, Deak P, Gali A, Hajnal Z, Frauenheim T, Choyke JW
Materials Science Forum, 483, 569, 2005 |
| 18 |
Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC
Gali A, Deak P, Rauls E, Ordejon P, Carlsson FHC, Ivanov IG, Son NT, Janzen E, Choyke WJ
Materials Science Forum, 457-460, 443, 2004 |
| 19 |
The nature of the shallow boron acceptor in SiC - localization versus effective mass theory
Gerstmann U, Gali A, Deak P, Frauenheim T, Overhof H
Materials Science Forum, 457-460, 711, 2004 |
| 20 |
Theoretical investigation of an intrinsic defect in SiC
Gali A, Deak P, Son NT, Janzen E
Materials Science Forum, 389-3, 477, 2002 |
