화학공학소재연구정보센터
검색결과 : 32건
No. Article
11 Two ways to achieve an anammox influent from real reject water treatment at lab-scale: Partial SBR nitrification and SHARON process
Gali A, Dosta J, van Loosdrecht MCM, Mata-Alvarez J
Process Biochemistry, 42(4), 715, 2007
12 Optimization of biological nitrogen removal via nitrite in a SBR treating supernatant from the anaerobic digestion of municipal solid wastes
Mace S, Dosta J, Gali A, Mata-Alvarez J
Industrial & Engineering Chemistry Research, 45(8), 2787, 2006
13 Biological nitrogen removal via nitrite of reject water with a SBR and chemostat SHARON/denitrification process
Gali A, Dosta J, van Loosdrecht MCM, Mata-Alvarez J
Industrial & Engineering Chemistry Research, 45(22), 7656, 2006
14 Use of hydrolyzed primary sludge as internal carbon source for denitrification in a SBR treating reject water via nitrite
Gali A, Dosta J, Mata-Alvarez J
Industrial & Engineering Chemistry Research, 45(22), 7661, 2006
15 Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC
Yan F, Devaty RP, Choyke WJ, Gali A, Schmid F, Pensl G, Wagner G
Materials Science Forum, 483, 493, 2005
16 Theoretical investigations of complexes of p-type dopants and carbon interstitial in SiC: bistable, negative-U defects
Gali A, Hornos T, Deak P, Son NT, Janzen E, Choyke WJ
Materials Science Forum, 483, 519, 2005
17 The search for near interface oxide traps - First-principles calculations on intrinsic SiO2 defects
Knaup JM, Deak P, Gali A, Hajnal Z, Frauenheim T, Choyke JW
Materials Science Forum, 483, 569, 2005
18 Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC
Gali A, Deak P, Rauls E, Ordejon P, Carlsson FHC, Ivanov IG, Son NT, Janzen E, Choyke WJ
Materials Science Forum, 457-460, 443, 2004
19 The nature of the shallow boron acceptor in SiC - localization versus effective mass theory
Gerstmann U, Gali A, Deak P, Frauenheim T, Overhof H
Materials Science Forum, 457-460, 711, 2004
20 Theoretical investigation of an intrinsic defect in SiC
Gali A, Deak P, Son NT, Janzen E
Materials Science Forum, 389-3, 477, 2002