화학공학소재연구정보센터
검색결과 : 23건
No. Article
11 MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
Chang YA, Chu JT, Ko CT, Kuo HC, Lin CF, Wang SC
Journal of Crystal Growth, 287(2), 550, 2006
12 A novel method to improve VCSELs oxide-confined aperture uniformity using selective As+-implanted underlying layer
Huang HW, Kao CC, Chang YA, Kuo HC, Laih LH, Wang SC
Materials Chemistry and Physics, 97(1), 10, 2006
13 Experimental identification of the degenerated equilibrium in extreme Al end of the Al-Cr system
Du Y, Schuster JC, Chang YA
Journal of Materials Science, 40(4), 1023, 2005
14 Phase transformations in sputter deposited NiMn thin films
Huang ML, Ladwig PF, Chang YA
Thin Solid Films, 478(1-2), 137, 2005
15 MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
Kuo HC, Yao HH, Chang YH, Chang YA, Tsai MY, Hsieh J, Chang EY, Wang SC
Journal of Crystal Growth, 272(1-4), 538, 2004
16 Phase diagram calculation: past, present and future
Chang YA, Chen SL, Zhang F, Yan XY, Xie FY, Schmid-Fetzer R, Oates WA
PROGRESS IN MATERIALS SCIENCE, 49(3-4), 313, 2004
17 Grain growth in sputtered nanoscale PdIn thin films
Huang ML, Wang YZ, Chang YA
Thin Solid Films, 449(1-2), 113, 2004
18 Characteristics of vertical thermal/PECVD polysilicon oxides formed on the sidewall of polysilicon films
Lee MZ, Chang YA, Lee CL, Lei TF
Journal of the Electrochemical Society, 150(1), G28, 2003
19 Issues concerning the preparation of ohmic contacts to n-GaN
Pelto CM, Chang YA, Chen Y, Williams RS
Solid-State Electronics, 45(9), 1597, 2001
20 Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAlxGa1-x as a metallization
Chen CP, Lin CF, Swenson D, Kao CR, Jan CH, Chang YA
Journal of Vacuum Science & Technology B, 17(2), 432, 1999