검색결과 : 23건
No. | Article |
---|---|
11 |
MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser Chang YA, Chu JT, Ko CT, Kuo HC, Lin CF, Wang SC Journal of Crystal Growth, 287(2), 550, 2006 |
12 |
A novel method to improve VCSELs oxide-confined aperture uniformity using selective As+-implanted underlying layer Huang HW, Kao CC, Chang YA, Kuo HC, Laih LH, Wang SC Materials Chemistry and Physics, 97(1), 10, 2006 |
13 |
Experimental identification of the degenerated equilibrium in extreme Al end of the Al-Cr system Du Y, Schuster JC, Chang YA Journal of Materials Science, 40(4), 1023, 2005 |
14 |
Phase transformations in sputter deposited NiMn thin films Huang ML, Ladwig PF, Chang YA Thin Solid Films, 478(1-2), 137, 2005 |
15 |
MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission Kuo HC, Yao HH, Chang YH, Chang YA, Tsai MY, Hsieh J, Chang EY, Wang SC Journal of Crystal Growth, 272(1-4), 538, 2004 |
16 |
Phase diagram calculation: past, present and future Chang YA, Chen SL, Zhang F, Yan XY, Xie FY, Schmid-Fetzer R, Oates WA PROGRESS IN MATERIALS SCIENCE, 49(3-4), 313, 2004 |
17 |
Grain growth in sputtered nanoscale PdIn thin films Huang ML, Wang YZ, Chang YA Thin Solid Films, 449(1-2), 113, 2004 |
18 |
Characteristics of vertical thermal/PECVD polysilicon oxides formed on the sidewall of polysilicon films Lee MZ, Chang YA, Lee CL, Lei TF Journal of the Electrochemical Society, 150(1), G28, 2003 |
19 |
Issues concerning the preparation of ohmic contacts to n-GaN Pelto CM, Chang YA, Chen Y, Williams RS Solid-State Electronics, 45(9), 1597, 2001 |
20 |
Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAlxGa1-x as a metallization Chen CP, Lin CF, Swenson D, Kao CR, Jan CH, Chang YA Journal of Vacuum Science & Technology B, 17(2), 432, 1999 |