화학공학소재연구정보센터
검색결과 : 129건
No. Article
121 Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching
Feng G, Zheng XH, Fu Y, Zhu JJ, Shen XM, Zhang BS, Zhao DG, Wang YT, Yang H, Liang JW
Journal of Crystal Growth, 240(3-4), 368, 2002
122 Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD
Zheng XH, Feng ZH, Wang YT, Zheng WL, Jia QJ, Jiang XM, Yang H, Liang JW
Journal of Crystal Growth, 242(1-2), 124, 2002
123 The study of martensitic transformation and nanoscale surface relief in zirconia
Chen XY, Zheng XH, Fang HS, Shi HZ, Wang XF, Chen HM
Journal of Materials Science Letters, 21(5), 415, 2002
124 Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition
Fu Y, Yang H, Zhao DG, Zheng XH, Li SF, Sun YP, Feng ZH, Wang YT, Duan LH
Journal of Crystal Growth, 225(1), 45, 2001
125 Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure
Qu B, Zheng XH, Wang YT, Lin SM, Yang H, Liang JW
Journal of Crystal Growth, 226(1), 57, 2001
126 Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates
Qu B, Zheng XH, Wang YT, Xu DP, Lin SM, Yang H, Liang JW
Journal of Crystal Growth, 227, 399, 2001
127 Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates
Zheng XH, Qu B, Wang YT, Dai ZZ, Han JY, Yang H, Liang JW
Journal of Crystal Growth, 233(1-2), 40, 2001
128 Investigation of {111}A and {111} planes of c-GaN epilayers grown on GaAs(001) by MOCVD
Zheng XH, Qu B, Wang YT, Feng ZH, Han JY, Yang H, Liang JW
Journal of Crystal Growth, 233(1-2), 52, 2001
129 X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate
Qu B, Zheng XH, Wang YT, Feng ZH, Liu SA, Lin SM, Yang H, Liang JW
Thin Solid Films, 392(1), 29, 2001