화학공학소재연구정보센터
검색결과 : 158건
No. Article
101 Surface segregation phenomena of solute elements in Al-Pb and Al-Fe dilute binary alloys
Tsubakino H, Nogami A, Yamamoto Y, Yamamoto A, Terasawa M, Mitamura T, Kinomura A, Horino Y
Applied Surface Science, 238(1-4), 464, 2004
102 Preparation and characterization of Zn-Se bilayer thin film structure
Singh M, Vijay YK
Applied Surface Science, 239(1), 79, 2004
103 Structural characterization of alloyed Al/Ti and Ti contacts on SiC
Parisini A, Poggi A, Nipoti R
Materials Science Forum, 457-460, 837, 2004
104 Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation
Poggi A, Nipoti R, Solmi S, Bersani M, Vanzetti L
Materials Science Forum, 457-460, 1357, 2004
105 Formation of iron-nitrides by irradiation of Fe-57/Si bilayers with N2+ ions
Bibic N, Milinovic V, Dhar S, Lieb KP, Milosavljevic M, Siljegovic M, Perusko D, Schaaf P
Thin Solid Films, 459(1-2), 23, 2004
106 Further studies of N doped a-SiC : H films deposited by PECVD and annealed by pulse electron beam
Huran J, Hotovy I, Kobzev AP, Balalykin NI
Thin Solid Films, 459(1-2), 149, 2004
107 Medium range ordering of amorphous silicon-carbon alloys studied by GISAXS, optical spectroscopy and IBA
Gracin D, Dubcek P, Zorc H, Juraic K
Thin Solid Films, 459(1-2), 216, 2004
108 Transient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O-2(+) ion-fluence in SiGe
Huyghebaert C, Brijs B, Janssens T, Vandervorst W
Applied Surface Science, 203, 56, 2003
109 Ionization probability changes of the Si+ ions during the transient for 3 keV O-2(+) bombardment of Si
Huyghebaert C, Janssens T, Brijs B, Vandervorst W
Applied Surface Science, 203, 134, 2003
110 SIMS and high-resolution RBS analysis of ultrathin SiOxNy films
Kimura K, Nakajima K, Kobayashi H, Miwa S, Satori K
Applied Surface Science, 203, 418, 2003