화학공학소재연구정보센터
검색결과 : 1,289건
No. Article
991 LEXES and SIMS as complementary techniques for full quantitative characterization of nanometer structures
Hombourger C, Staub R, Schuhmacher M, Desse F, de Chambost E, Hitzman C
Applied Surface Science, 203, 383, 2003
992 Extremely deep SIMS profiling: oxygen in FZ silicon
Barcz A, Zielinski M, Nossarzewska E, Lindstroem G
Applied Surface Science, 203, 396, 2003
993 TOF-SIMS as a rapid diagnostic tool to monitor the growth mode of thin (high k) films
Conard T, Vandervorst W, Petry J, Zhao C, Besling W, Nohira H, Richard O
Applied Surface Science, 203, 400, 2003
994 Application of SIMS in microelectronics
Tsukamoto K, Yoshikawa S, Toujou F, Morita H
Applied Surface Science, 203, 404, 2003
995 SIMS and high-resolution RBS analysis of ultrathin SiOxNy films
Kimura K, Nakajima K, Kobayashi H, Miwa S, Satori K
Applied Surface Science, 203, 418, 2003
996 Quantitative depth profiling of nitrogen in ultrathin oxynitride film with low energy SIMS
Shon HK, Kang HJ, Hong TE, Chang HS, Kim KJ, Kim HK, Moon DW
Applied Surface Science, 203, 423, 2003
997 Solubility limits of dopants in 4H-SiC
Linnarsson MK, Zimmermann U, Wong-Leung J, Schoner A, Janson MS, Jagadish C, Svensson BG
Applied Surface Science, 203, 427, 2003
998 Adventures in molecular electronics: how to attach wires to molecules
Haynie BC, Walker AV, Tighe TB, Allara DL, Winograd N
Applied Surface Science, 203, 433, 2003
999 Gate oxide properties investigated by TOF-SIMS profiles on CMOS devices
Zanderigo F, Brazzelli D, Rocca S, Pregnolato A, Grossi A, Queirolo G
Applied Surface Science, 203, 437, 2003
1000 TOF-SIMS depth profiling of SIMON
Ge X, Gui D, Chen X, Cha LZ, Brox O, Benninghoven A
Applied Surface Science, 203, 441, 2003