화학공학소재연구정보센터
검색결과 : 160건
No. Article
91 Meg1/Grb10 overexpression causes postnatal growth retardation and insulin resistance via negative modulation of the IGF1R and IR cascades
Shiura H, Miyoshi N, Konishi A, Wakisaka-Saito N, Suzuki R, Muguruma K, Kohda T, Wakana S, Yokoyama M, Ishino F, Kaneko-Ishino T
Biochemical and Biophysical Research Communications, 329(3), 909, 2005
92 Novel electrochemical surface modification method of carbon fiber and its utilization to the preparation of functional electrode
Ishifune M, Suzuki R, Mima Y, Uchida K, Yamashita N, Kashimura S
Electrochimica Acta, 51(1), 14, 2005
93 Host-dependent activation of IS1203v excision in Shiga toxin-producing Escherichia coli
Kusumoto M, Suzuki R, Nishiya Y, Okitsu T, Oka M
Journal of Bioscience and Bioengineering, 97(6), 406, 2004
94 Characterization of photoresists for ArF-excimer laser lithography using monoenergetic positron beams
Uedono A, Ohdaira T, Suzuki R, Mikado T, Fukui S, Kimura S, Miyamoto H, Nemoto H
Journal of Polymer Science Part B: Polymer Physics, 42(2), 341, 2004
95 Copper barrier properties of low dielectric constant SiOCNH film deposited by plasma-enhanced CVD
Shioya Y, Ishimaru T, Ikakura H, Nishimoto Y, Ohdaira T, Suzuki R, Maeda K
Journal of the Electrochemical Society, 151(1), C56, 2004
96 Free volume and density gradients of amorphous polymer surfaces as determined by use of a pulsed low-energy positron lifetime beam and PVT data
Algers J, Suzuki R, Ohdaira T, Maurer FHJ
Macromolecules, 37(11), 4201, 2004
97 Estimation of Ni/polyethylene bilayer by slow positron beam
Azami K, Habu M, Takagi K, Kanazawa I, Suzuki R, Ohdaira T
Materials Science Forum, 445-6, 42, 2004
98 Ion-implantation induced defects in ZnO studied by a slow positron beam
Chen ZQ, Maekawa M, Sekiguchi T, Suzuki R, Kawasuso A
Materials Science Forum, 445-6, 57, 2004
99 Depth dependence of defects in ion-implanted Si probed by a positron beam
Fujinami M, Miyagoe T, Sawada T, Suzuki R, Ohdaira T, Akahane T
Materials Science Forum, 445-6, 78, 2004
100 Positron beam study of defects induced in Ar-implanted Si
Miyagoe T, Fujinami M, Sawada T, Suzuki R, Ohdaira T, Akahane T
Materials Science Forum, 445-6, 150, 2004