화학공학소재연구정보센터
검색결과 : 3,482건
No. Article
91 Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
Benyahia D, Kubiszyn L, Michalczewski K, Keblowski A, Martyniuk P, Piotrowski J, Rogalski A
Journal of Crystal Growth, 483, 26, 2018
92 P-type single-crystalline ZnO films obtained by (Na,N) dual implantation through dynamic annealing process
Zhang ZY, Huang JY, Chen SS, Pan XH, Chen LX, Ye ZZ
Journal of Crystal Growth, 483, 236, 2018
93 Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(001) heterostructures
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV
Journal of Crystal Growth, 483, 265, 2018
94 Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE
Turski H, Muziol G, Siekacz M, Wolny P, Szkudlarek K, Feduniewicz-Zmuda A, Dybko K, Skierbiszewski C
Journal of Crystal Growth, 482, 56, 2018
95 MBE growth of few-layer 2H-MoTe2 on 3D substrates
Vishwanath S, Sundar A, Liu XY, Azcatl A, Lochocki E, Woll AR, Rouvimov S, Hwang WS, Lu N, Peng X, Lien HH, Weisenberger J, McDonnell S, Kim MJ, Dobrowolska M, Furdyna JK, Shen K, Wallace RM, Jena D, Xing HG
Journal of Crystal Growth, 482, 61, 2018
96 Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes
Lyu YX, Han X, Sun YY, Jiang Z, Guo CY, Xiang W, Dong YN, Cui J, Yao Y, Jiang DW, Wang GW, Xu YQ, Niu ZC
Journal of Crystal Growth, 482, 70, 2018
97 Overcoming Ehrlich-Schwobel barrier in (111)A GaAs molecular beam epitaxy
Ritzmann J, Schott R, Gross K, Reuter D, Ludwig A, Wieck AD
Journal of Crystal Growth, 481, 7, 2018
98 Growth of AlGaN alloys under excess group III conditions: Formation of vertical nanorods
Singha C, Sen S, Pramanik P, Palit M, Das A, Roy AS, Sen S, Bhattacharyya A
Journal of Crystal Growth, 481, 40, 2018
99 Growth of N-polar GaN by ammonia molecular beam epitaxy
Fireman MN, Li HR, Keller S, Mishra UK, Speck JS
Journal of Crystal Growth, 481, 65, 2018
100 Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer
Jia BW, Tan KH, Loke WK, Wicaksono S, Yoon SF
Journal of Crystal Growth, 490, 97, 2018