화학공학소재연구정보센터
검색결과 : 268건
No. Article
91 Differential absorption spectroscopy on coupled InGaAs quantum dots
Chuang KY, Chen CY, Tzeng TE, Feng DJY, Lay TS
Journal of Crystal Growth, 311(7), 1767, 2009
92 Formation of In0.5Ga0.5As ring-and-hole structure by droplet molecular beam epitaxy
Pankaow N, Panyakeow S, Ratanathammaphan S
Journal of Crystal Growth, 311(7), 1832, 2009
93 Fabrication of In0.15Ga0.85As nanohloes on GaAs by droplet molecular beam epitaxy
Boonpeng P, Panyakeow S, Ratanathammaphan S
Journal of Crystal Growth, 311(7), 1843, 2009
94 InGaAs quantum wires grown on (100)InP substrates
Tzeng TE, Chen CY, Feng DJ, Lay TS
Journal of Crystal Growth, 311(7), 1851, 2009
95 Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1-y buffers by molecular beam epitaxy
Hudait MK, Brenner M, Ringel SA
Solid-State Electronics, 53(1), 102, 2009
96 Thermal analysis of asymmetric intracavity-contacted oxide-aperture VCSELs for efficient heat dissipation
Lee HK, Song YM, Lee YT, Yu JS
Solid-State Electronics, 53(10), 1086, 2009
97 Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(100) (4 x 2)/c(8 x 2) surface
Seidel U, Sagol BE, Pettenkofer C, Hannappel T
Applied Surface Science, 255(3), 722, 2008
98 On the long-wavelength optimization of highly strained InGaAs/GaAs quantum wells grown by metal-organic vapor-phase epitaxy
Zhang Z, Berggren J, Hammar M
Journal of Crystal Growth, 310(13), 3163, 2008
99 Triple-axis X-ray reciprocal space mapping of InyGa1-yAs thermophotovoltaic diodes grown on (100) InP substrates
Dashiell MW, Ehsani H, Sander PC, Newman FD, Wang CA, Shellenbarger ZA, Donetski D, Gu N, Anikeev S
Solar Energy Materials and Solar Cells, 92(9), 1003, 2008
100 Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs
Tsai JH, Li CM
Solid-State Electronics, 52(1), 146, 2008