91 |
Improved crystal quality of semipolar AlN by employing a thermal annealing technique with MOVPE Jo M, Itokazu Y, Kuwaba S, Hirayama H Journal of Crystal Growth, 507, 307, 2019 |
92 |
Understanding Al incorporation into 4H-SiC during epitaxy Ferro G, Chaussende D, Tsavdaris N Journal of Crystal Growth, 507, 338, 2019 |
93 |
MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates Sundaram S, Li X, Alam S, Ayari T, Halfaya Y, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A Journal of Crystal Growth, 507, 352, 2019 |
94 |
Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(100) substrate by molecular beam epitaxy Machida R, Akahane K, Watanabe I, Hara S, Fujikawa S, Kasamatsu A, Fujishiro HI Journal of Crystal Growth, 507, 357, 2019 |
95 |
Atomic step-flow epitaxy of low defect InGaAs islands on Si(111) by micro-channel selective area MOVPE Fu YF, Otake N, Tachino Y, Watanabe T, Sugiyama M Journal of Crystal Growth, 507, 384, 2019 |
96 |
Assessing epitaxial regrowth material quality on a micro-transfer printed GaAs substrate Schmieder KJ, Lumb MP, Bennett MF, Haughn CR, Mack S, Yakes MK, Maximenko SI, Walters RJ Journal of Crystal Growth, 507, 402, 2019 |
97 |
First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy Bui KM, Iwata JI, Kangawa Y, Shiraishi K, Shigeta Y, Oshiyama A Journal of Crystal Growth, 507, 421, 2019 |
98 |
Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs Kumagai N, Takahashi T, Yamada H, Cong GW, Wang XL, Shimizu M Journal of Crystal Growth, 507, 437, 2019 |
99 |
Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted-molecular beam epitaxy Wu YZ, Bin L, Li ZH, Tao T, Xie ZL, Xiu XQ, Chen P, Chen DJ, Lu H, Shi Y, Zhang R, Zheng YD Journal of Crystal Growth, 506, 30, 2019 |
100 |
Vanishing biexciton binding energy from stacked, MOVPE grown, site-controlled pyramidal quantum dots for twin photon generation Moroni ST, Varo S, Juska G, Chung TH, Gocalinska A, Pelucchi E Journal of Crystal Growth, 506, 36, 2019 |