검색결과 : 4,738건
No. | Article |
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91 |
Assessing epitaxial regrowth material quality on a micro-transfer printed GaAs substrate Schmieder KJ, Lumb MP, Bennett MF, Haughn CR, Mack S, Yakes MK, Maximenko SI, Walters RJ Journal of Crystal Growth, 507, 402, 2019 |
92 |
Study of a new type nominal "washboard-like" triangular defects in 4H-SiC 4 degrees off-axis (0001) Si-face homoepitaxial layers Hu JC, Jia RX, Niu YX, Zang Y, Pu HB Journal of Crystal Growth, 506, 14, 2019 |
93 |
Heteroepitaxial 3C-SiC on Si (100) with flow-modulated carbonization process conditions Li Y, Zhao ZF, Yu L, Wang Y, Yin ZJ, Li ZH, Han P Journal of Crystal Growth, 506, 114, 2019 |
94 |
MOCVD growth of beta-FeSi2 film on modified Si surface by silver and enhancement of luminescence Akiyama K, Nojima S, Takahashi R, Matsumoto Y, Funakubo H Journal of Crystal Growth, 506, 131, 2019 |
95 |
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers Yan GG, Liu XF, Shen ZW, Wen ZX, Chen J, Zhao WS, Wang L, Zhang F, Zhang XH, Li XG, Sun GS, Zeng YP, Wang ZG Journal of Crystal Growth, 505, 1, 2019 |
96 |
3C-SiC grown on Si by using a Si1-xGex buffer layer Zimbone M, Zielinski M, Barbagiovanni EG, Calabretta C, La Via F Journal of Crystal Growth, 519, 1, 2019 |
97 |
Preferred orientations and microstructures of lanthanum phosphate films prepared via laser chemical vapor deposition Katsui H, Kondo N Journal of Crystal Growth, 519, 46, 2019 |
98 |
Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs Siddique A, Ahmed R, Anderson J, Piner EL Journal of Crystal Growth, 517, 28, 2019 |
99 |
Pyrolytic carbon coating of fused quartz by vacuum vapor transport Suerfu B, Souza M, Calaprice F Journal of Crystal Growth, 516, 40, 2019 |
100 |
Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW Abdelhamid M, Reynolds JG, El-Masry NA, Bedair SM Journal of Crystal Growth, 520, 18, 2019 |