화학공학소재연구정보센터
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No. Article
91 Assessing epitaxial regrowth material quality on a micro-transfer printed GaAs substrate
Schmieder KJ, Lumb MP, Bennett MF, Haughn CR, Mack S, Yakes MK, Maximenko SI, Walters RJ
Journal of Crystal Growth, 507, 402, 2019
92 Study of a new type nominal "washboard-like" triangular defects in 4H-SiC 4 degrees off-axis (0001) Si-face homoepitaxial layers
Hu JC, Jia RX, Niu YX, Zang Y, Pu HB
Journal of Crystal Growth, 506, 14, 2019
93 Heteroepitaxial 3C-SiC on Si (100) with flow-modulated carbonization process conditions
Li Y, Zhao ZF, Yu L, Wang Y, Yin ZJ, Li ZH, Han P
Journal of Crystal Growth, 506, 114, 2019
94 MOCVD growth of beta-FeSi2 film on modified Si surface by silver and enhancement of luminescence
Akiyama K, Nojima S, Takahashi R, Matsumoto Y, Funakubo H
Journal of Crystal Growth, 506, 131, 2019
95 Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers
Yan GG, Liu XF, Shen ZW, Wen ZX, Chen J, Zhao WS, Wang L, Zhang F, Zhang XH, Li XG, Sun GS, Zeng YP, Wang ZG
Journal of Crystal Growth, 505, 1, 2019
96 3C-SiC grown on Si by using a Si1-xGex buffer layer
Zimbone M, Zielinski M, Barbagiovanni EG, Calabretta C, La Via F
Journal of Crystal Growth, 519, 1, 2019
97 Preferred orientations and microstructures of lanthanum phosphate films prepared via laser chemical vapor deposition
Katsui H, Kondo N
Journal of Crystal Growth, 519, 46, 2019
98 Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs
Siddique A, Ahmed R, Anderson J, Piner EL
Journal of Crystal Growth, 517, 28, 2019
99 Pyrolytic carbon coating of fused quartz by vacuum vapor transport
Suerfu B, Souza M, Calaprice F
Journal of Crystal Growth, 516, 40, 2019
100 Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW
Abdelhamid M, Reynolds JG, El-Masry NA, Bedair SM
Journal of Crystal Growth, 520, 18, 2019