화학공학소재연구정보센터
검색결과 : 783건
No. Article
1 Investigation of pinholes in Czochralski silicon ingots in relation to structure loss
Sortland OS, Ovrelid EJ, M'Hamdi M, Di Sabatino M
Journal of Crystal Growth, 510, 1, 2019
2 Influence of extended crystallographic defects on the formation kinetics of oxygen-related thermal donors in multicrystalline silicon
Bounab R, Veirman J, Albaric M, Bailly S, Marie B, Pihan E
Journal of Crystal Growth, 510, 23, 2019
3 99.992% Si-28 CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits
Mazzocchi V, Sennikov PG, Bulanov AD, Churbanov MF, Bertrand B, Hutin L, Barnes JP, Drozdov MN, Hartmann JM, Sanquer M
Journal of Crystal Growth, 509, 1, 2019
4 X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(001) wafers
Meduna M, Kreiliger T, Mauceri M, Puglisi M, Mancarella F, La Via F, Crippa D, Miglio L, von Kanel H
Journal of Crystal Growth, 507, 70, 2019
5 Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers
Niu YX, Tang XY, Wu PF, Kong LY, Li Y, Xia JH, Tian HL, Tian L, Tian LX, Zhang WT, Jia RX, Yang F, Wu JM, Pan Y, Zhang YM
Journal of Crystal Growth, 507, 143, 2019
6 The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates
Yan GG, Liu XF, Shen ZW, Zhao WS, Wang L, Cui YX, Li JT, Zhang F, Sun GS, Zeng YP
Journal of Crystal Growth, 507, 175, 2019
7 The influence of travelling magnetic field on phosphorus distribution in n-type multi-crystalline silicon
Buchovska I, Dropka N, Kayser S, Kiessling FM
Journal of Crystal Growth, 507, 299, 2019
8 Development of high power SiC devices for rail traction power systems
Liu GY, Wu YB, Li KJ, Wang YG, Li CZ
Journal of Crystal Growth, 507, 442, 2019
9 MOCVD growth of beta-FeSi2 film on modified Si surface by silver and enhancement of luminescence
Akiyama K, Nojima S, Takahashi R, Matsumoto Y, Funakubo H
Journal of Crystal Growth, 506, 131, 2019
10 Formation of thicker silicon wires on a sufficiently cooled substrate during the gas phase zinc reduction reaction of SiCl4
Shirane N, Inasawa S
Journal of Crystal Growth, 506, 171, 2019