화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates
Thanh TN, Robert C, Giudicelli E, Letoublon A, Cornet C, Ponchet A, Rohel T, Balocchi A, Micha JS, Perrin M, Loualiche S, Marie X, Bertru N, Durand O, Le Corre A
Journal of Crystal Growth, 378, 25, 2013
2 Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers
Thanh TN, Robert C, Letoublon A, Cornet C, Quinci T, Giudicelli E, Almosni S, Boudet N, Ponchet A, Kuyyalil J, Danila M, Durand O, Bertru N, Le Corre A
Thin Solid Films, 541, 36, 2013
3 Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy
Bondi A, Cornet C, Boyer S, Thanh TN, Letoublon A, Pedesseau L, Durand O, Moreac A, Ponchet A, Le Corre A, Even J
Thin Solid Films, 541, 72, 2013
4 Engineering strained silicon on insulator wafers with the Smart Cut (TM) technology
Ghyselen B, Hartmann JM, Ernst T, Aulnette C, Osternaud B, Bogumilowicz Y, Abbadie A, Besson P, Rayssac O, Tiberj A, Daval N, Cayrefourq I, Fournel F, Moriceau H, Di Nardo C, Andrieu F, Paillard V, Cabie M, Vincent L, Snoeck E, Cristiano F, Rocher A, Ponchet A, Claverie A, Boucaud P, Semeria MN, Bensahel D, Kernevez B, Mazure C
Solid-State Electronics, 48(8), 1285, 2004
5 TEM evaluation of epitaxial strain in III-V semi-conductors: evidence of coherent and incoherent stress relaxation
Rocher A, Ponchet A, Blanc S, Fontaine C
Applied Surface Science, 188(1-2), 55, 2002
6 Chemical Beam Epitaxy of Strain Balanced Gap/GaAs/InP/GaAs Superlattices
Bensaoula AH, Freundlich A, Bensaoula A, Rossignol V, Ponchet A
Journal of Vacuum Science & Technology B, 12(2), 1110, 1994