검색결과 : 6건
No. | Article |
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1 |
Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates Thanh TN, Robert C, Giudicelli E, Letoublon A, Cornet C, Ponchet A, Rohel T, Balocchi A, Micha JS, Perrin M, Loualiche S, Marie X, Bertru N, Durand O, Le Corre A Journal of Crystal Growth, 378, 25, 2013 |
2 |
Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers Thanh TN, Robert C, Letoublon A, Cornet C, Quinci T, Giudicelli E, Almosni S, Boudet N, Ponchet A, Kuyyalil J, Danila M, Durand O, Bertru N, Le Corre A Thin Solid Films, 541, 36, 2013 |
3 |
Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy Bondi A, Cornet C, Boyer S, Thanh TN, Letoublon A, Pedesseau L, Durand O, Moreac A, Ponchet A, Le Corre A, Even J Thin Solid Films, 541, 72, 2013 |
4 |
Engineering strained silicon on insulator wafers with the Smart Cut (TM) technology Ghyselen B, Hartmann JM, Ernst T, Aulnette C, Osternaud B, Bogumilowicz Y, Abbadie A, Besson P, Rayssac O, Tiberj A, Daval N, Cayrefourq I, Fournel F, Moriceau H, Di Nardo C, Andrieu F, Paillard V, Cabie M, Vincent L, Snoeck E, Cristiano F, Rocher A, Ponchet A, Claverie A, Boucaud P, Semeria MN, Bensahel D, Kernevez B, Mazure C Solid-State Electronics, 48(8), 1285, 2004 |
5 |
TEM evaluation of epitaxial strain in III-V semi-conductors: evidence of coherent and incoherent stress relaxation Rocher A, Ponchet A, Blanc S, Fontaine C Applied Surface Science, 188(1-2), 55, 2002 |
6 |
Chemical Beam Epitaxy of Strain Balanced Gap/GaAs/InP/GaAs Superlattices Bensaoula AH, Freundlich A, Bensaoula A, Rossignol V, Ponchet A Journal of Vacuum Science & Technology B, 12(2), 1110, 1994 |