1 |
Structural impact of nitrogen incorporation on properties of alkali germanophosphate glasses Paraschiv GL, Munoz F, Jensen LR, Larsen RM, Yue YZ, Smedskjaer MM Journal of the American Ceramic Society, 101(11), 5004, 2018 |
2 |
Nitrogen-concentration modulated interface quality, band alignment and electrical properties of HfTiON/Ge gate stack pretreated by trimethylaluminum precursor Gao J, He G, Xiao DQ, Jiang SS, Lv JG, Cheng C, Sun ZQ Materials Research Bulletin, 91, 166, 2017 |
3 |
Microstructure and photoelectric properties of P-doped silicon-rich SiNx film as an n-type layer for PIN-type amorphous silicon thin film solar cells Ma DH, Zhang WJ, Jiang ZY, Ma Q, Ma XB, Fan ZQ, Song DY, Zhang L Solar Energy, 144, 808, 2017 |
4 |
Electrical, optical and micro-structural properties of ultra-thin HfTiON films Zhang JQ, Li ZX, Zhou H, Ye C, Wang H Applied Surface Science, 294, 58, 2014 |
5 |
Electrodeposition and sol-gel derived nanocrystalline N-ZnO thin films for photoelectrochemical splitting of water: Exploring the role of microstructure Singh N, Kumari B, Sharma S, Chaudhary S, Upadhyay S, Satsangi VR, Dass S, Shrivastav R Renewable Energy, 69, 242, 2014 |
6 |
Al-enhanced N incorporation in GaNAs alloys grown by chemical beam epitaxy Kolhatkar G, Boucherif A, Valdivia CE, Wallace SG, Fafard S, Aimez V, Ares R Journal of Crystal Growth, 380, 256, 2013 |
7 |
The influence of nitrogen incorporation on the optical properties of anodic Ta2O5 Di Franco F, Santamaria M, Di Quarto F, Tsuji E, Habazaki H Electrochimica Acta, 59, 382, 2012 |
8 |
The influence of the activated carbon post-treatment on the phenolic compounds removal Cansado IPP, Mourao PAM, Falcao AI, Carrott MMLR, Carrott PJM Fuel Processing Technology, 103, 64, 2012 |
9 |
Investigation of cation (Sn2+) and anion (N3-) substitution in favor of visible light photocatalytic activity in the layered perovskite K2La2Ti3O10 Kumar V, Govind, Uma S Journal of Hazardous Materials, 189(1-2), 502, 2011 |
10 |
In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC Chen Q, Feng YP, Chai JW, Zhang Z, Pan JS, Wang SJ Thin Solid Films, 518(24), E31, 2010 |