화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Investigation of basal plane dislocations in the 4H-SiC epilayers grown on {0001} substrates
Tsuchida A, Miyanagi T, Kamata I, Nakamura T, Izumi K, Nakayama K, Ishii R, Asano K, Sugawara Y
Materials Science Forum, 483, 97, 2005
2 Improvement in electrical performance of Schottky contacts for high-voltage diode
Nakamura T, Miyanagi T, Tsuchida H, Kamata I, Jikimoto T, Izumi K
Materials Science Forum, 483, 721, 2005
3 8.3 kV 4H-SiC pin diode on (000-1) C-face with small forward voltage degradation
Nakayama K, Sugawara Y, Tsuchida H, Miyanagi T, Kamata I, Nakamura T, Asano K, Ishii R
Materials Science Forum, 483, 969, 2005
4 Hot-wall CVD growth of 4H-SiC using Si2Cl6+C3H8+H-2 system
Miyanagi T, Nishino S
Materials Science Forum, 389-3, 199, 2002
5 Homoepitaxial growth of cubic silicon carbide by sublimation epitaxy
Furusho T, Miyanagi T, Okui Y, Ohshima S, Nishino S
Materials Science Forum, 389-3, 279, 2002
6 Characterization of 2in SiC as-grown bulk by SWBXT at SPring-8
Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S
Materials Science Forum, 389-3, 407, 2002
7 Observation of 2in SiC wafer by SWBXT at SPring-8
Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S
Materials Science Forum, 389-3, 411, 2002
8 4H-SiC epitaxial growth for high-power devices
Tsuchida H, Kamata I, Jikimoto T, Miyanagi T, Izumi K
Materials Science Forum, 433-4, 131, 2002
9 Conditions for micropipe dissociation by 4H-SiC CVD growth
Kamata I, Tsuchida H, Jikimoto T, Miyanagi T, Izumi K
Materials Science Forum, 433-4, 261, 2002