1 |
Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization Lin YS, Cheng PH, Huang KW, Lin HC, Chen MJ Applied Surface Science, 443, 421, 2018 |
2 |
Nitrogen-concentration modulated interface quality, band alignment and electrical properties of HfTiON/Ge gate stack pretreated by trimethylaluminum precursor Gao J, He G, Xiao DQ, Jiang SS, Lv JG, Cheng C, Sun ZQ Materials Research Bulletin, 91, 166, 2017 |
3 |
Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability Samnakay R, Balandin AA, Srinivasan P Solid-State Electronics, 135, 37, 2017 |
4 |
Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics Huang JJ, Tsai YJ, Tsai MC, Huang LT, Lee MH, Chen MJ Applied Surface Science, 324, 662, 2015 |
5 |
Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability Huang JJ, Tsai YJ, Tsai MC, Lee MH, Chen MJ Applied Surface Science, 330, 221, 2015 |
6 |
Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen Huang JJ, Huang LT, Tsai MC, Lee MH, Chen MJ Applied Surface Science, 305, 214, 2014 |
7 |
Comparative study of electrical characteristics in (100) and (110) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure Kawanago T, Kakushima K, Ahmet P, Kataoka Y, Nishiyama A, Sugii N, Tsutsui K, Natori K, Hattori T, Iwai H Solid-State Electronics, 84, 53, 2013 |
8 |
Solution Processable Low-Voltage Organic Thin Film Transistors with High-k Relaxor Ferroelectric Polymer as Gate Insulator Li JH, Sun ZH, Yan F Advanced Materials, 24(1), 88, 2012 |
9 |
Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process Kawanago T, Suzuki T, Lee Y, Kakushima K, Ahmet P, Tsutsui K, Nishiyama A, Sugii N, Natori K, Hattori T, Iwai H Solid-State Electronics, 68, 68, 2012 |
10 |
Thermal stability and chemical bonding states of AlOxNy/Si gate stacks revealed by synchrotron radiation photoemission spectroscopy He G, Toyoda S, Shimogaki Y, Oshima M Applied Surface Science, 257(5), 1638, 2010 |