화학공학소재연구정보센터
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No. Article
1 Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys
Hart J, Hazbun R, Eldridge D, Hickey R, Fernando N, Adam T, Zollner S, Kolodzey J
Thin Solid Films, 604, 23, 2016
2 Electrical characterization studies of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates
Harris TR, Ryu MY, Yeo YK, Beeler RT, Kouvetakis J
Current Applied Physics, 14, S123, 2014
3 Gold nanocluster distribution on faceted and kinked Si nanowires
Boukhicha R, Vincent L, Renard C, Gardes C, Yam V, Fossard F, Patriarche G, Jabeen F, Bouchier D
Thin Solid Films, 520(8), 3304, 2012
4 Enhancing epitaxial SixC1-x deposition by adding Ge
Ostermay I, Kammler T, Bartha JW, Kucher P
Thin Solid Films, 518(10), 2834, 2010
5 Study of surface roughening of tensily strained Si1-x-yGexCy films grown by ultra high vacuum-chemical vapor deposition
Calmes C, Bouchier D, Debarre D, Le Thanh V, Clerc C
Thin Solid Films, 428(1-2), 150, 2003
6 Alternatives to thick MBE-grown relaxed SiGe buffers
Hackbarth T, Herzog HJ, Zeuner M, Hock G, Fitzgerald BA, Bulsara M, Rosenblad C, von Kanel H
Thin Solid Films, 369(1-2), 148, 2000
7 A novel doping technology for ultra-shallow junction fabrication: boron diffusion from boron-adsorbed layer by rapid thermal annealing
Kim KS, Song YH, Park KT, Kurino H, Matsuura T, Hane K, Koyanagi M
Thin Solid Films, 369(1-2), 207, 2000
8 Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs
Tezuka T, Kurobe A, Sugiyama N, Takagi S
Thin Solid Films, 369(1-2), 338, 2000
9 Si1-xGex selective epitaxial growth for ultra-high-speed self-aligned HBTs
Oda K, Ohue E, Tanabe M, Shimamoto H, Washio K
Thin Solid Films, 369(1-2), 358, 2000
10 Strained Si1-xGex graded channel PMOSFET grown by UHVCVD
Su CY, Wu SL, Chang SJ, Chen LP
Thin Solid Films, 369(1-2), 371, 2000