화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Quantum chemical study on the gas-phase reaction of tertiarybutylhydrazine: A potential nitrogen-bearing compound for GaN film growth
Hsu YJ, Hong LS, Jiang JC
Thin Solid Films, 498(1-2), 100, 2006
2 Effects of hydrogen on GaN metalorganic vapor-phase epitaxy using tertiarybutylhydrazine as nitrogen source
Hsu YJ, Hong LS, Jiang JC, Chang JC
Journal of Crystal Growth, 266(1-3), 347, 2004
3 Nitrogen-arsenic exchange process and investigation of the nitrided GaAs surfaces in MOVPE
Hoffmann V, Poser F, Kaspari C, Weeke S, Pristovsek M, Richter W
Journal of Crystal Growth, 272(1-4), 30, 2004
4 Metalorganic vapor-phase epitaxy of GaN from trimethylgallium and tertiarybutylhydrazine
Hsu YJ, Hong LS, Tsay JE
Journal of Crystal Growth, 252(1-3), 144, 2003
5 Nitrogen doping of MOVPE-grown ZnSe by hydrazine derivatives
Pohl UW, Gottfriedsen J, Schumann H
Journal of Crystal Growth, 209(4), 683, 2000