화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices
Chandrasekaran S, Simanjuntak FM, Aluguri R, Tseng TY
Thin Solid Films, 660, 777, 2018
2 Symmetric tunnel field-effect transistor (S-TFET)
Nam H, Cho MH, Shin C
Current Applied Physics, 15(2), 71, 2015
3 The Memristive Properties of a Single VO2 Nanowire with Switching Controlled by Self-Heating
Bae SH, Lee S, Koo H, Lin L, Jo BH, Park C, Wang ZL
Advanced Materials, 25(36), 5098, 2013
4 Electrofluorescence switching of fluorescent polymer film
Seo S, Shin H, Park C, Lim H, Kim E
Macromolecular Research, 21(3), 284, 2013
5 White Electrofluorescence Switching from Electrochemically Convertible Yellow Fluorescent Dyad
Seo S, Kim Y, Zhou Q, Clavier G, Audebert P, Kim E
Advanced Functional Materials, 22(17), 3556, 2012
6 Electrochemical Fluorescence Switching from a Patternable Poly(1,3,4-oxadiazole) Thin Film
Seo S, Kim Y, You J, Sarwade BD, Wadgaonkar PP, Menon SK, More AS, Kim E
Macromolecular Rapid Communications, 32(8), 637, 2011
7 The synthesis and property of dihydropyrene derivatives containing a nitrogen atom
Chifuku K, Sawada T, Kuwahara Y, Shosenji H
Molecular Crystals and Liquid Crystals, 470, 369, 2007
8 Characteristics of electrochemical transistors
Taniguchi M, Kawai T
Molecular Crystals and Liquid Crystals, 444, 61, 2006
9 BIFET - a novel bipolar SiC switch for high voltage power electronics
Mitlehner H, Friedrichs P, Elpelt R, Dohnke KO, Schorner R, Stephani D
Materials Science Forum, 457-460, 1245, 2004
10 1700 V SiC Schottky diodes scaled to 25 A
Peters D, Dohnke KO, Hecht C, Stephani D
Materials Science Forum, 353-356, 675, 2001