화학공학소재연구정보센터
검색결과 : 40건
No. Article
1 GaN metal-oxide-semiconductor devices with ZrO2 as dielectric layers
Zhang GZ, Zheng MJ, Wan JX, Wu H, Liu C
Applied Surface Science, 469, 98, 2019
2 Ohmic contact mechanism for RF superimposed DC sputtered-ITO transparent p-electrodes with a variety of Sn2O3 content for GaN-based light-emitting diodes
Kim TK, Yoon YJ, Oh SK, Lee YL, Cha YJ, Kwak JS
Applied Surface Science, 432, 233, 2018
3 The growth of the metallic ZrNx thin films on P-GaN substrate by pulsed laser deposition
Gu CY, Sui ZP, Li YX, Chu HY, Ding SA, Zhao YF, Jiang CP
Applied Surface Science, 433, 306, 2018
4 The influence of an ultrathin Ni interface layer on the performance of GaN-based 380 nm UV LED with sputtered Zn1-xMgxO: Al transparent p-type electrode
Maslyk M, Borysiewicz MA, Pagowska KD, Wzorek M, Ekielski M, Kaminska E
Thin Solid Films, 649, 61, 2018
5 Microstructural, electrical and frequency-dependent properties of Au/p-Cu2ZnSnS4/n-GaN heterojunction
Reddy VR, Janardhanam V, Won J, Choi CJ
Journal of Colloid and Interface Science, 499, 180, 2017
6 Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer
Liang F, Zhao DG, Jiang DS, Liu ZS, Zhu JJ, Chen P, Yang J, Liu W, Li X, Liu ST, Xing Y, Zhang LQ, Yang H, Long H, Li M
Journal of Crystal Growth, 467, 1, 2017
7 Effect of p-GaN layer grown with H-2 carrier gas on wall-plug efficiency of high-power LEDs
Lu KF, Lin TK, Liou JK, Yang CD, Lee CY, Tsai JD
Solid-State Electronics, 132, 86, 2017
8 Ohmic contacts to Gallium Nitride materials
Greco G, Iucolano F, Roccaforte F
Applied Surface Science, 383, 324, 2016
9 n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE
Wang MH, Bian JM, Sun HJ, Liu WF, Zhang YZ, Luo YM
Applied Surface Science, 389, 199, 2016
10 Effect of p-GaN hole concentration on the stabilization and performance of a graphene current spreading layer in near-ultraviolet light-emitting diodes
Min JH, Seo TH, Choi SB, Kim K, Lee JY, Park MD, Kim MJ, Suh EK, Kim JR, Lee DS
Current Applied Physics, 16(10), 1382, 2016