화학공학소재연구정보센터
검색결과 : 2,453건
No. Article
1 Co2N nanoparticles embedded N-doped mesoporous carbon as efficient electrocatalysts for oxygen reduction reaction
Guo DK, Tian ZF, Wang JC, Ke XB, Zhu YF
Applied Surface Science, 473, 555, 2019
2 Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface
Turski H, Krzyzewski F, Feduniewicz-Zmuda A, Wolny P, Siekacz M, Muziol G, Cheze C, Nowakowski-Szukudlarek K, Xing H, Jena D, Zaluska-Kotur M, Skierbiszewski C
Applied Surface Science, 484, 771, 2019
3 A study on Ga-Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
Zheng Y, Agrawal M, Dharmarasu N, Radhakrishnan K, Patwal S
Applied Surface Science, 481, 319, 2019
4 2D MXenes: Electromagnetic property for microwave absorption and electromagnetic interference shielding
Cao MS, Cai YZ, He P, Shu JC, Cao WQ, Yuan J
Chemical Engineering Journal, 359, 1265, 2019
5 Three dimensional titanium molybdenum nitride nanowire assemblies as highly efficient and durable platinum support for methanol oxidation reaction
Liu FF, Wu ZF, Dang D, Wang GH, Tian XL, Yang X
Electrochimica Acta, 295, 50, 2019
6 Platinum-decorated three dimensional titanium copper nitride architectures with durable methanol oxidation reaction activity
Liu FF, Dang D, Tian XL
International Journal of Hydrogen Energy, 44(16), 8415, 2019
7 Molecular-level design of Fe-N-C catalysts derived from Fe-dual pyridine coordination complexes for highly efficient oxygen reduction
Zhang XR, Mollamahale YB, Lyu DD, Liang LZ, Yu F, Qing M, Du YH, Zhang XY, Tian ZQ, Shen PK
Journal of Catalysis, 372, 245, 2019
8 Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film
Tanaka S, Shojiki K, Uesugi K, Hayashi Y, Miyake H
Journal of Crystal Growth, 512, 16, 2019
9 Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys
Ohkawa K, Ichinohe F, Watanabe T, Nakamura K, Iida D
Journal of Crystal Growth, 512, 69, 2019
10 Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
Nagamatsu K, Ando Y, Kono T, Cheong H, Nitta S, Honda Y, Pristovsek M, Amano H
Journal of Crystal Growth, 512, 78, 2019