화학공학소재연구정보센터
검색결과 : 114건
No. Article
1 The role of hydrogen in carbon incorporation and surface roughness of MOCVD-grown thin boron nitride
Caban PA, Teklinska D, Michalowski PP, Gaca J, Wojcik M, Grzonka J, Ciepielewski P, Mozdzonek M, Baranowski JM
Journal of Crystal Growth, 498, 71, 2018
2 Quasi-Chemistry of Intrinsic Point Defects in Cadmium Telluride Thin Films
Mazur T, Prokopiv V, Turovska L
Molecular Crystals and Liquid Crystals, 671(1), 85, 2018
3 Hot-wall low pressure chemical vapor deposition growth and characterization of AlN thin films
Heinselman KN, Brown RJ, Shealy JR
Journal of Crystal Growth, 475, 286, 2017
4 Growth of BaIn2S4 layers through the hot-wall-epitaxy method and their electric/optical properties
Hong KJ, Jeong TS, Youn CJ
Journal of Crystal Growth, 433, 13, 2016
5 Hot-wall-epitaxy growth and electrical/optical characterization of epitaxial BaAl2S4/GaAs layers
Jeong JW, Hong KJ, Jeong TS, Youn CJ
Journal of Crystal Growth, 451, 120, 2016
6 Properties of GaN layers grown on N-face free-standing GaN substrates
Li X, Hemmingsson C, Forsberg U, Janzen E, Pozina G
Journal of Crystal Growth, 413, 81, 2015
7 Growth and Hall-effect/photocurrent analysis on BaAl2Se4 layers grown by hot wall epitaxy method
You SH, Hong KJ, Jeong TS, Youn CJ
Journal of Crystal Growth, 419, 31, 2015
8 In-situ decomposition and etching of AIN and GaN in the presence of HCI
Fahle D, Kruecken T, Dauelsberg M, Kalisch H, Heuken M, Vescan A
Journal of Crystal Growth, 393, 89, 2014
9 The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates
Teklinska D, Grodecki K, Jozwik-Biala I, Caban P, Olszyna A, Strupinski W
Journal of Crystal Growth, 401, 542, 2014
10 Growth and photocurrent characteristics of the photoconductive MnAl2S4 layers grown by hot-wall epitaxy method
You SH, Hong KJ, Jeong TS, Lim KY, Youn CJ
Journal of Crystal Growth, 404, 116, 2014