화학공학소재연구정보센터
검색결과 : 32건
No. Article
1 A 2-D semi-analytical model of parasitic capacitances for MOSFETs with high k gate dielectric in short channel
Wang M, Ke DM, Xu CX, Wang BT
Solid-State Electronics, 92, 35, 2014
2 Epitaxial growth and electrical properties of ultrathin La2Hf2O7 high-k gate dielectric films
Xiong YH, Tu HL, Du J, Wei F, Zhang XQ, Yang MM, Zhao HB, Chen DP, Wang WW
Applied Surface Science, 283, 554, 2013
3 Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks
Dai CH, Chang TC, Chu AK, Kuo YJ, Hung YC, Lo WH, Ho SH, Chen CE, Shih JM, Chung WL, Chen HM, Dai BS, Tsai TM, Xia GR, Cheng O, Huang CT
Thin Solid Films, 520(5), 1511, 2011
4 Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition
Huang LY, Li AD, Zhang WQ, Li H, Xia YD, Wu D
Applied Surface Science, 256(8), 2496, 2010
5 Interface and electrical properties of La-silicate for direct contact of high-k with silicon
Kakushima K, Tachi K, Adachi M, Okamoto K, Sato S, Song J, Kawanago T, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H
Solid-State Electronics, 54(7), 715, 2010
6 Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric
Kakushima K, Koyanagi T, Tachi K, Song J, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H
Solid-State Electronics, 54(7), 720, 2010
7 Electrical characteristics of SiGe channel MOS devices with high-k/metal gate incorporated with nitrogen by plasma immersion ion implantation
Fu CH, Chang-Liao KS, Du LW, Wang TK, Tsai WF, Ai CF
Solid-State Electronics, 54(10), 1094, 2010
8 Electrical properties of Ge metal-oxide-semiconductor capacitors with La2O3 gate dielectric annealed in different ambient
Xu HX, Xu JP, Li CX, Lai PT
Thin Solid Films, 518(23), 6962, 2010
9 Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
Kim WH, Maeng WJ, Moon KJ, Myoung JM, Kim H
Thin Solid Films, 519(1), 362, 2010
10 Effects of Ge content in SiGe channel on electrical characteristics of high-k gated MOS device
Fu CH, Chang-Liao KS, Tsai KH, Wang TK, Lee YJ
Solid-State Electronics, 53(8), 888, 2009