화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Analytical model for an asymmetric double-gate MOSFET with gate-oxide thickness and flat-band voltage variations in the subthreshold region
Shin YH, Yun I
Solid-State Electronics, 120, 19, 2016
2 Improved high-k stacks with chemical oxide interfacial layer by DPN/PNA treatment
Li S, Chen YT, Chang SJ
Current Applied Physics, 15(3), 180, 2015
3 Low-temperature electrical characterization of junctionless transistors
Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G
Solid-State Electronics, 80, 135, 2013
4 Effects of channel width variation on electrical characteristics of tri-gate Junction less transistors
Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G
Solid-State Electronics, 81, 58, 2013
5 Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors
Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G
Solid-State Electronics, 81, 101, 2013
6 A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors
Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G
Solid-State Electronics, 81, 113, 2013
7 New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors
Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G
Solid-State Electronics, 89, 139, 2013
8 Revisited parameter extraction methodology for electrical characterization of junctionless transistors
Jeon DY, Park SJ, Mouis M, Berthome M, Barraud S, Kim GT, Ghibaudo G
Solid-State Electronics, 90, 86, 2013
9 MOS capacitor for simple thiol based biosensor applications
Bhagirath N, Kanhere E, Bhattacharya E
Thin Solid Films, 519(3), 982, 2010
10 Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS
Kakushima K, Okamoto K, Adachi M, Tachi K, Song J, Sato S, Kawanago T, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H
Applied Surface Science, 254(19), 6106, 2008