화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Characterization of Basal Plane Dislocations in PVT-Grown SiC by Transmission Electron Microscopy
Jeong M, Kim DY, Hong SK, Lee JY, Yeo IG, Eun TH, Chun MC
Korean Journal of Materials Research, 26(11), 656, 2016
2 Glide of threading edge dislocations after basal plane dislocation conversion during 4H-SiC epitaxial growth
Abadier M, Song HZ, Sudarshan TS, Picard YN, Skowronski M
Journal of Crystal Growth, 418, 7, 2015
3 Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4 degrees off-axis 4H-SiC
Song HZ, Sudarshan TS
Journal of Crystal Growth, 371, 94, 2013
4 Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers
Song HZ, Rana T, Sudarshan TS
Journal of Crystal Growth, 320(1), 95, 2011
5 The benefits and current progress of SiC SGTOs for pulsed power applications
Ogunniyi A, O'Brien H, Lelis A, Scozzie C, Shaheen W, Agarwal A, Zhang J, Callanan R, Temple V
Solid-State Electronics, 54(10), 1232, 2010
6 Improvement of SiC wafer warp by annealing
Sasaki M, Harada S, Okamoto Y, Miyanagi Y, Shiomi H
Materials Science Forum, 457-460, 829, 2004