검색결과 : 15건
No. | Article |
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1 |
Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs Desmaris V, Shiu JY, Rorsman N, Zirath H, Chang EY Solid-State Electronics, 52(5), 632, 2008 |
2 |
Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InPHEMT MMIC technology Malmkvist M, Mellberg A, Rorsman N, Zirath H, Grahn J Solid-State Electronics, 50(5), 858, 2006 |
3 |
Planar Schottky microwave diodes on 4H-SiC Sudow M, Rorsman N, Nilsson PA, Zirath H Materials Science Forum, 483, 937, 2005 |
4 |
Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contact to undoped AlGaN/GaN heterostructures Desmaris V, Eriksson J, Rorsman N, Zirath H Electrochemical and Solid State Letters, 7(4), G72, 2004 |
5 |
Fabrication and characterization of reactively sputtered TaN thin-film resistors for millimeter wave applications Mellberg A, Nicols SP, Rorsman N, Zirath H Electrochemical and Solid State Letters, 7(11), G261, 2004 |
6 |
Simple self-aligned fabrication process for silicon carbide static induction transistors Dynefors K, Desmaris V, Eriksson J, Nilsson PA, Rorsman N, Zirath H Materials Science Forum, 457-460, 1125, 2004 |
7 |
High frequency measurements and simulations of SiC MESFETs up to 250 degrees C Liu W, Zetterling CM, Ostling M, Eriksson J, Rorsman N, Zirath H Materials Science Forum, 457-460, 1209, 2004 |
8 |
Investigation of the scalability of 4H-SiC MESFETs for high frequency applications Rorsman N, Nilsson PA, Eriksson J, Andersson K, Zirath H Materials Science Forum, 457-460, 1229, 2004 |
9 |
High CW power 0.3 mu m gate AlGaN/GaN HEMTs grown by MBE on sapphire Desmaris V, Eriksson J, Rorsman N, Zirath H Materials Science Forum, 457-460, 1629, 2004 |
10 |
Evaluation of SiC MESFET structures using large-signal time-domain simulations Jonsson R, Eriksson J, Wahab Q, Rudner S, Rorsman N, Zirath H, Svensson C Materials Science Forum, 389-3, 1395, 2002 |