화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs
Desmaris V, Shiu JY, Rorsman N, Zirath H, Chang EY
Solid-State Electronics, 52(5), 632, 2008
2 Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InPHEMT MMIC technology
Malmkvist M, Mellberg A, Rorsman N, Zirath H, Grahn J
Solid-State Electronics, 50(5), 858, 2006
3 Planar Schottky microwave diodes on 4H-SiC
Sudow M, Rorsman N, Nilsson PA, Zirath H
Materials Science Forum, 483, 937, 2005
4 Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contact to undoped AlGaN/GaN heterostructures
Desmaris V, Eriksson J, Rorsman N, Zirath H
Electrochemical and Solid State Letters, 7(4), G72, 2004
5 Fabrication and characterization of reactively sputtered TaN thin-film resistors for millimeter wave applications
Mellberg A, Nicols SP, Rorsman N, Zirath H
Electrochemical and Solid State Letters, 7(11), G261, 2004
6 Simple self-aligned fabrication process for silicon carbide static induction transistors
Dynefors K, Desmaris V, Eriksson J, Nilsson PA, Rorsman N, Zirath H
Materials Science Forum, 457-460, 1125, 2004
7 High frequency measurements and simulations of SiC MESFETs up to 250 degrees C
Liu W, Zetterling CM, Ostling M, Eriksson J, Rorsman N, Zirath H
Materials Science Forum, 457-460, 1209, 2004
8 Investigation of the scalability of 4H-SiC MESFETs for high frequency applications
Rorsman N, Nilsson PA, Eriksson J, Andersson K, Zirath H
Materials Science Forum, 457-460, 1229, 2004
9 High CW power 0.3 mu m gate AlGaN/GaN HEMTs grown by MBE on sapphire
Desmaris V, Eriksson J, Rorsman N, Zirath H
Materials Science Forum, 457-460, 1629, 2004
10 Evaluation of SiC MESFET structures using large-signal time-domain simulations
Jonsson R, Eriksson J, Wahab Q, Rudner S, Rorsman N, Zirath H, Svensson C
Materials Science Forum, 389-3, 1395, 2002