화학공학소재연구정보센터
검색결과 : 20건
No. Article
1 In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN
Schimmel S, Duchstein P, Steigerwald TG, Kimmel ACL, Schlucker E, Zahn D, Niewa R, Wellmann P
Journal of Crystal Growth, 498, 214, 2018
2 Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers
Schimmel S, Koch M, Macher P, Kimmel ACL, Steigerwald TG, Alt NSA, Schlucker E, Wellmann P
Journal of Crystal Growth, 479, 59, 2017
3 Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides
Schimmel S, Kunecke U, Meisel M, Hertweck B, Steigerwald TG, Nebel C, Alt NSA, Schlucker E, Wellmann P
Journal of Crystal Growth, 456, 33, 2016
4 Cubic silicon carbide as a potential photovoltaic material
Syvajarvi M, Ma QB, Jokubavicius V, Galeckas A, Sun JW, Liu XY, Jansson M, Wellmann P, Linnarsson M, Runde P, Johansen BA, Thogersen A, Diplas S, Carvalho PA, Lovvik OM, Wright DN, Azarov AY, Svensson BG
Solar Energy Materials and Solar Cells, 145, 104, 2016
5 Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applications
Zheng Q, Crocco J, Bensalah H, Wellmann P, Osvet A, Kunecke U, Dierre F, Vela O, Perez JM, Dieguez E
Journal of Crystal Growth, 381, 15, 2013
6 Intermetallic compounds dynamic formation during annealing of stacked elemental layers and its influences on the crystallization of Cu2ZnSnSe4 films
Wibowo RA, Moeckel SA, Yoo H, Hetzner C, Hoelzing A, Wellmann P, Hock R
Materials Chemistry and Physics, 142(1), 311, 2013
7 Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)(2) absorbers produced by rapid thermal processing
Kunecke U, Holzing A, Jost S, Lechner R, Vogt H, Heiss A, Palm J, Hock R, Wellmann P
Thin Solid Films, 535, 97, 2013
8 Preface to selected papers from EMRS 2011 Symposium Q: Engineering of wide bandgap semiconductor materials for energy saving Preface
Wellmann P, Syvajarvi M, Kneissel M, Wang RM
Thin Solid Films, 522, 1, 2012
9 Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100)
Hens P, Wagner G, Holzing A, Hock R, Wellmann P
Thin Solid Films, 522, 2, 2012
10 Effects of source material on epitaxial growth of fluorescent SiC
Jokubavicius V, Hens P, Liljedahl R, Sun JW, Kaiser M, Wellmann P, Sano S, Yakimova R, Kamiyama S, Syvajarvi M
Thin Solid Films, 522, 7, 2012