화학공학소재연구정보센터
검색결과 : 19건
No. Article
1 High Al-doping of SiC using a modified PVT (M-PVT) growth set-up
Muller R, Kunecke U, Weingartner R, Schmitt H, Desperrier P, Wellmann P
Materials Science Forum, 483, 31, 2005
2 AFM investigation of interface step structures on PVT-grown (0001)Si 6H-SiC crystals
Herro ZG, Epelbaum BM, Weingartner R, Bickermann M, Masri P, Winnacker A
Journal of Crystal Growth, 270(1-2), 113, 2004
3 On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC
Weingartner R, Wellmann PJ, Winnacker A
Materials Science Forum, 457-460, 645, 2004
4 Uniform axial charge carrier concentration in PVT-grown p-type 6H SiC by non-uniform distribution of boron in the powder source
Herro ZG, Bickermann M, Epelbaum BM, Weingartner R, Kunecke U, Winnacker A
Materials Science Forum, 457-460, 719, 2004
5 On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield
Bickermann M, Weingartner R, Winnacker A
Journal of Crystal Growth, 254(3-4), 390, 2003
6 Analysis of silicon incorporation into VGF-grown GaAs
Birkmann B, Weingartner R, Wellmann P, Wiedemann B, Muller G
Journal of Crystal Growth, 237, 345, 2002
7 Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method
Straubinger TL, Bickermann M, Weingartner R, Wellmann PJ, Winnacker A
Journal of Crystal Growth, 240(1-2), 117, 2002
8 Incorporation of boron and the role of nitrogen as a compensation source in SiC bulk crystal growth
Bickermann M, Weingartner R, Hofmann D, Straubinger TL, Winnacker A
Materials Science Forum, 389-3, 127, 2002
9 Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method
Straubinger TL, Bickermann M, Rasp M, Weingartner R, Wellmann PJ, Winnacker A
Materials Science Forum, 389-3, 131, 2002
10 On the preparation of vanadium-doped semi-insulating SiC bulk crystals
Bickermann M, Hofmann D, Straubinger TL, Weingartner R, Winnacker A
Materials Science Forum, 389-3, 139, 2002