화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Working mechanism of iodide ions and its application to Cu microstructure control in through silicon via filling
Sung M, Kim SH, Lee HJ, Lim T, Kim JJ
Electrochimica Acta, 295, 224, 2019
2 Activation of amino-based monolayers for electroless metallization of high-aspect-ratio through-silicon vias by using a simple ultrasonic-assisted plating solution
Chen ST, Cheng YS, Chang YH, Yang TM, Lee JT, Chen GS
Applied Surface Science, 440, 209, 2018
3 구리 전해 도금을 이용한 실리콘 관통 비아 채움 공정
김회철, 김재정
Korean Chemical Engineering Research, 54(6), 723, 2016
4 Galvanostatic bottom-up filling of TSV-like trenches: Choline-based leveler containing two quaternary ammoniums
Kim MJ, Seo Y, Kim HC, Lee Y, Choe S, Kim YG, Cho SK, Kim JJ
Electrochimica Acta, 163, 174, 2015