검색결과 : 12건
No. | Article |
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1 |
Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility Antonova IV, Nebogatikova NA, Stepina NP, Volodin VA, Kirienko VV, Rybin MG, Obrazstova ED, Golyashov VA, Kokh KA, Tereshchenko OE Journal of Materials Science, 56(15), 9330, 2021 |
2 |
Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2 Filianina MV, Klimovskikh II, Shvets IA, Rybkin AG, Petukhov AE, Chulkov EV, Golyashov VA, Kokh KA, Tereshchenko OE, Polley C, Balasubramanian T, Leandersson M, Shikin AM Materials Chemistry and Physics, 207, 253, 2018 |
3 |
Subcycle observation of lightwave-driven Dirac currents in a topological surface band Reimann J, Schlauderer S, Schmid CP, Langer F, Baierl S, Kokh KA, Tereshchenko OE, Kimura A, Lange C, Gudde J, Hofer U, Huber R Nature, 562(7727), 396, 2018 |
4 |
Experimental Realization of a Topological p-n Junction by Intrinsic Defect Grading Bathon T, Achilli S, Sessi P, Golyashov VA, Kokh KA, Tereshchenko OE, Bode M Advanced Materials, 28(11), 2183, 2016 |
5 |
Single Electron Gating of Topological Insulators Sessi P, Bathon T, Kokh KA, Tereshchenko OE, Bode M Advanced Materials, 28(45), 10073, 2016 |
6 |
Chemistry of Wet Treatment of GaAs(111)B and GaAs(111)A in Hydrazine-Sulfide Solutions Berkovits VL, Ulin VP, Tereshchenko OE, Paget D, Rowe ACH, Chiaradia P, Doyle BP, Nannarone S Journal of the Electrochemical Society, 158(3), D127, 2011 |
7 |
Composition and morphology of fluorinated anodic oxides on InAs (111)A surface Valisheva NA, Tereshchenko OE, Prosvirin IP, Levtsova TA, Rodjakina EE, Kovchavcev AV Applied Surface Science, 256(19), 5722, 2010 |
8 |
New reconstruction-stoichiometry correlation for GaAs(001) surface treated by atomic hydrogen Toropetsky KV, Tereshchenko OE, Petukhov DA, Terekhov AS Applied Surface Science, 254(24), 8041, 2008 |
9 |
Structure and composition of chemically prepared and vacuum annealed InSb(001) surfaces Tereshchenko OE Applied Surface Science, 252(21), 7684, 2006 |
10 |
Surface passivation and morphology of GaAs(100) treated in HCl-isopropanol solution Alperovich VL, Tereshchenko OE, Rudaya NS, Sheglov DV, Latyshev AV, Terekhov AS Applied Surface Science, 235(3), 249, 2004 |