화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Kinetic modeling of PM combustion with relative velocity at low-temperature and numerical simulation of continuous regenerating type PM removal device that uses a fluidized bed
Yokoo K, Matsune H, Kishida M, Tatebayashi J, Yamamoto T
Advanced Powder Technology, 31(2), 718, 2020
2 Promoting effect of water vapor on particle matter combustion in a low-temperature continuous regeneration type PM removal device using a fluidized bed
Yokoo K, Matsune H, Kishida M, Tatebayashi J, Yamamoto T
Powder Technology, 355, 657, 2019
3 Formation and optical properties of Tm, Yb-codoped ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition
Tatebayashi J, Yoshii G, Nakajima T, Mishina M, Fujiwara Y
Journal of Crystal Growth, 503, 13, 2018
4 Highly efficient particulate matter removal by a fluidized-bed-type device operated in continuous regeneration mode
Yamamoto T, Yokoo K, Kusu A, Tatebayashi J
Powder Technology, 323, 86, 2018
5 Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications
Tatebayashi J, Kako S, Ho J, Ota Y, Iwamoto S, Arakawa Y
Journal of Crystal Growth, 468, 144, 2017
6 A numerical simulation of PM adhesion characteristics in a fluidized bed type PM removal device by a finite volume Eulerian-Eulerian method
Yamamoto T, Tsuboi T, Tatebayashi J
Powder Technology, 288, 26, 2016
7 An experimental investigation of the PM adhesion characteristics in a fluidized bed type PM removal device
Yamamoto T, Hori K, Tatebayashi J
Powder Technology, 289, 31, 2016
8 Formation and optical properties of multi-stack InGaAs quantum dots embedded in GaAs nanowires by selective metalorganic chemical vapor deposition
Tatebayashi J, Ota Y, Ishida S, Nishioka M, Iwamoto S, Arakawa Y
Journal of Crystal Growth, 370, 299, 2013
9 Collection Properties of PM in a Fluidized Bed-Type PM-Removal Device
Yamamoto T, Hori K, Nakaso K, Yamamoto T, Tatebayashi J
KAGAKU KOGAKU RONBUNSHU, 39(1), 60, 2013
10 Luminescence in excess of 1.5 mu m at room-temperature of InAs quantum dots capped by a thin InGaAs strain-reducing layer
Tatebayashi J, Nishioka M, Arakawa Y
Journal of Crystal Growth, 237, 1296, 2002