화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Photoabsorption and Fluorescence Cross-Sections of Sicl4 in the Region of 6.2-31 eV
Ibuki T, Kono M, Asari Y, Hiraya A, Shobatake K
Journal of Chemical Physics, 106(12), 4853, 1997
2 Use of Threshold Electron and Fluorescence Coincidence Techniques to Probe the Decay Dynamics of the Valence States of Cf4+, Sif4+, Sicl4+, and Gecl4+
Smith DM, Tuckett RP, Yoxall KR, Codling K, Hatherly PA, Aarts JF, Stankiewicz M
Journal of Chemical Physics, 101(12), 10559, 1994