화학공학소재연구정보센터
검색결과 : 36건
No. Article
1 Secondary ion mass spectrometry characterization of anomalous behavior for low dose ion implanted phosphorus in silicon
Penley C, Stevie FA, Griffis DP, Siebel S, Kulig L, Lee J
Journal of Vacuum Science & Technology B, 28(3), 511, 2010
2 On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0)
Bishop SM, Reynolds CL, Molstad JC, Stevie FA, Barnhardt DE, Davis RF
Applied Surface Science, 255(13-14), 6535, 2009
3 Model study of electron beam charge compensation for positive secondary ion mass spectrometry using a positive primary ion beam
Zhu ZM, Stevie FA, Griffis DP
Applied Surface Science, 254(9), 2708, 2008
4 Quantification in dynamic SIMS: Current status and future needs
Stevie FA, Griffis DP
Applied Surface Science, 255(4), 1364, 2008
5 Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0)
Bishop SM, Reynolds CL, Liliental-Weber Z, Uprety Y, Ebert CW, Stevie FA, Park JS, Davis RF
Journal of Crystal Growth, 311(1), 72, 2008
6 Mass fractionation of carbon and hydrogen secondary ions upon Cs+ and O-2(+) bombardment of organic materials
Harton SE, Zhu ZM, Stevie FA, Griffis DP, Ade H
Journal of Vacuum Science & Technology A, 25(3), 480, 2007
7 Improved understanding of an electron beam charge compensation method for magnetic sector secondary ion mass spectrometer analysis of insulators
Zhu Z, Gu C, Stevie FA, Griffis DP
Journal of Vacuum Science & Technology A, 25(4), 769, 2007
8 Back side SIMS analysis of hafnium silicate
Gu C, Stevie FA, Bennett J, Garcia R, GriffiS DP
Applied Surface Science, 252(19), 7179, 2006
9 SIMS depth profiling of deuterium labeled polymers in polymer multilayers
Harton SE, Stevie FA, Griffis DP, Ade H
Applied Surface Science, 252(19), 7224, 2006
10 SIMS quantification of matrix and impurity species in AlxGa1-xN
Gu CJ, Stevie FA, Hitzman CJ, Saripalli YN, Johnson M, Griffis DP
Applied Surface Science, 252(19), 7228, 2006