화학공학소재연구정보센터
검색결과 : 89건
No. Article
1 Improvement in reliability and power consumption based on Ge10Sb90 films through erbium doping
Zou H, Hu YF, Zhu XQ, Sun YM, Zheng L, Sui YX, Wu SC, Song ZT
Journal of Materials Science, 52(9), 5216, 2017
2 Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
Rao F, Ding KY, Zhou YX, Zheng YH, Xia MJ, Lv SL, Song ZT, Feng SL, Ronneberger I, Mazzarello R, Zhang W, Ma E
Science, 358(6369), 1423, 2017
3 Feasibility study of current pulse induced 2-bit/4-state multilevel programming in phase-change memory
Liu Y, Fan X, Chen HP, Wang YQ, Liu B, Song ZT, Feng SL
Solid-State Electronics, 134, 51, 2017
4 Investigation on scalability of dual trench epitaxial diode for phase change memory
Wang H, Liu B, Liu Y, Zhang C, Zhan YP, Xu Z, Gao D, Song ZT, Feng SL
Solid-State Electronics, 132, 99, 2017
5 The investigations of characteristics of Sb2Te as a base phase-change material
Liu GY, Wu LC, Zhu M, Song ZT, Rao F, Song SN, Cheng Y
Solid-State Electronics, 135, 31, 2017
6 Phase-Change Memory Materials by Design: A Strain Engineering Approach
Zhou XL, Kalikka J, Ji XL, Wu LC, Song ZT, Simpson RE
Advanced Materials, 28(15), 3007, 2016
7 Direct evidence of reactive ion etching induced damages in Ge2Sb2Te5 based on different halogen plasmas
Li JT, Xia YY, Liu B, Feng GM, Song ZT, Gao D, Xu Z, Wang WW, Chan YP, Feng SL
Applied Surface Science, 378, 163, 2016
8 The improvement of nitrogen doped Ge2Sb2Te5 on the phase change memory resistance distributions
Xu Z, Liu B, Chen YF, Zhang ZH, Gao D, Wang H, Song ZT, Wang CZ, Ren JD, Zhu NF, Xiang YH, Zhan YP, Feng SL
Solid-State Electronics, 116, 119, 2016
9 Superlattice-like film for high data retention and high speed phase change random access memory
Li L, Song SN, Zhang ZH, Chen LL, Song ZT, Lv SL, Liu B, Guo TQ
Solid-State Electronics, 120, 52, 2016
10 Study on WSb3Te material for phase-change memory applications
Meng Y, Zhou XL, Han PG, Song ZT, Wu LC, Zhu CQ, Guo WJ, Xu L, Ma ZY, Song LK
Applied Surface Science, 355, 667, 2015