화학공학소재연구정보센터
검색결과 : 803건
No. Article
1 Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals
Arzig M, Salamon M, Hsiao TC, Uhlmann N, Wellmann PJ
Journal of Crystal Growth, 532, 2020
2 3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth
Han XF, Liu X, Nakano S, Harada H, Miyamura Y, Kakimoto K
Journal of Crystal Growth, 532, 2020
3 Computer modeling of HMCz Si growth
Kalaev V
Journal of Crystal Growth, 532, 2020
4 In situ observation of the solidification interface and grain boundary development of two silicon seeds with simultaneous measurement of temperature profile and undercooling
Lau V, Maeda K, Fujiwara K, Lan CW
Journal of Crystal Growth, 532, 2020
5 Unsteady numerical simulations considering effects of thermal stress and heavy doping on the behavior of intrinsic point defects in large-diameter Si crystal growing by Czochralski method
Mukaiyama Y, Sueoka K, Maeda S, Iizuka M, Mamedov VM
Journal of Crystal Growth, 532, 2020
6 Al(ON) gate dielectrics for 4H-SiC MOS devices
Xia JH, Wang SH, Tian LX, Zhang WT, Xu HY, Wan J, Wan CP, Pan Y, Yang F
Journal of Crystal Growth, 532, 2020
7 Solvent refining of silicon for solar cells - some practical aspects
Arnberg L, Fredriksson H, Ekerot S, Tadesse A
Journal of Crystal Growth, 531, 2020
8 Simulations of dislocation density in silicon carbide crystals grown by the PVT-method
Chen QS, Zhu P, He M
Journal of Crystal Growth, 531, 2020
9 The effects of pre-annealing on oxygen precipitation in silicon P/P-epitaxial wafers
Lee KH, Hwang DH, Kang HB, Lee BY
Journal of Crystal Growth, 531, 2020
10 A dry etching method for 4H-SiC via using photoresist mask
Liu R, Wu H, Zhang HD, Li C, Tian L, Li L, Li JL, Wu JM, Pan Y
Journal of Crystal Growth, 531, 2020