화학공학소재연구정보센터
검색결과 : 17건
No. Article
1 Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges
Khazaka R, Bogumilowicz Y, Rouchon D, Boutry H, Chalupa Z, Lapras V, Previtali B, Chevalier N, Papon AM, David S, Maitrejean S
Applied Surface Science, 445, 77, 2018
2 Evidence for Charge Transfer at the Interface between Hybrid Phosphomolybdate and Epitaxial Graphene
Huder L, Rinfray C, Rouchon D, Benayad A, Baraket M, Izzet G, Lipp-Bregolin F, Lapertot G, Dubois L, Proust A, Jansen L, Duclairoir F
Langmuir, 32(19), 4774, 2016
3 Study of the light emission in Ge layers and strained membranes on Si substrates
Gassenq A, Guilloy K, Pauc N, Hartmann JM, Dias GO, Rouchon D, Tardif S, Escalante J, Duchemin I, Niquet YM, Chelnokov A, Reboud V, Calvo V
Thin Solid Films, 613, 64, 2016
4 Germanium content and strain in Si1-xGex alloys characterized by Raman spectroscopy
Rouchon D, Mermoux M, Bertin F, Hartmann JM
Journal of Crystal Growth, 392, 66, 2014
5 Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (-2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations
Glowacki E, Le Royer C, Morand Y, Pedini JM, Denneulin T, Cooper D, Barnes JP, Nguyen P, Rouchon D, Hartmann JM, Gourhant O, Baylac E, Campidelli Y, Barge D, Bonnin O, Schwarzenbach W
Solid-State Electronics, 97, 82, 2014
6 Chalcopyrite thin-film solar cells by industry-compatible ink-based process
Roux F, Amtablian S, Anton M, Besnard G, Bilhaut L, Bommersbach P, Braillon J, Cayron C, Disdier A, Fournier H, Garnier J, Jannaud A, Jouhannaud J, Kaminski A, Karst N, Noel S, Perraud S, Poncelet O, Raccurt O, Rapisarda D, Ricaud A, Rouchon D, Roumanie M, Rouviere E, Sicardy O, Sonier F, Tarasov K, Tardif F, Tomassini M, Villanova J
Solar Energy Materials and Solar Cells, 115, 86, 2013
7 Study of annealing temperature influence on the performance of top gated graphene/SiC transistors
Clavel M, Poiroux T, Mouis M, Becerra L, Thomassin JL, Zenasni A, Lapertot G, Rouchon D, Lafond D, Faynot O
Solid-State Electronics, 71, 2, 2012
8 Low-temperature RPCVD of Si, SiGe alloy, and Si1-yCy films on Si substrates using trisilane (Silcore (R))
Gouye A, Kermarrec O, Halimaoui A, Campidelli Y, Rouchon D, Burdin M, Holliger P, Bensahel D
Journal of Crystal Growth, 311(13), 3522, 2009
9 Catalyst preparation for CMOS-compatible silicon nanowire synthesis
Renard VT, Jublot M, Gergaud P, Cherns P, Rouchon D, Chabli A, Jousseaume V
Nature Nanotechnology, 4(10), 654, 2009
10 Wet cleaning and surface characterization of Si1-xGex virtual substrates after a CMP step
Abbadie A, Hartmann JM, Besson P, Rouchon D, Martinez E, Holliger P, Di Nardo C, Campidelli Y, Billon T
Applied Surface Science, 254(21), 6793, 2008