화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers-A challenge for MBE growth
Manz C, Yang QK, Rattunde M, Schulz N, Rosener B, Kirste L, Wagner J, Kohler K
Journal of Crystal Growth, 311(7), 1920, 2009
2 Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme
Manz C, Kohler K, Kirste L, Yang QK, Rosener B, Moser R, Rattunde M, Wagner J
Journal of Crystal Growth, 311(17), 4158, 2009
3 Growth and layer structure optimization of 2.26 mu m (AlGaIn)(AsSb) diode lasers for room temperature operation
Simanowski S, Mermelstein C, Walther M, Herres N, Kiefer R, Rattunde M, Schmitz J, Wagner J, Weimann G
Journal of Crystal Growth, 227, 595, 2001
4 Analysis of dislocation densities and nanopipe formation in MBE-grown AlN-layers
Ebling DG, Kirste L, Rattunde M, Portmann J, Brenn R, Benz KW, Tillmann K
Materials Science Forum, 338-3, 1549, 2000