화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology
Wang GL, Abedin A, Moeen M, Kolandouz M, Luo J, Guo YL, Chen T, Yin HX, Zhu HL, Li JF, Zhao C, Radamson HH
Solid-State Electronics, 103, 222, 2015
2 Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22 nm node pMOSFETs
Wang GL, Moeen M, Abedin A, Xu YF, Luo J, Guo YL, Qin CL, Tang ZY, Yin HZ, Li JF, Yan J, Zhu HL, Zhao C, Chen DP, Ye TC, Kolahdouz M, Radamson HH
Solid-State Electronics, 114, 43, 2015
3 Lateral solid phase epitaxy of amorphously grown Si1-xGex layers on SiO2/Si(100) substrates using in-situ RPCVD postannealing
Skibitzki O, Yamamoto Y, Schubert MA, Tillack B
Thin Solid Films, 593, 91, 2015
4 Ultralow temperature ramping rate of LT to HT for the growth of highquality Ge epilayer on Si (100) by RPCVD
Chen D, Xue ZY, Wei X, Wang G, Ye L, Zhang M, Wang DW, Liu S
Applied Surface Science, 299, 1, 2014
5 Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx films
Adam T, Loubet N, Reznicek A, Paruchuri V, Sampson R, Sadana D
Thin Solid Films, 520(8), 3155, 2012
6 High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition
He H, Brabant P, Chung K, Shinriki M, Adam T, Reznicek A, Sadana D, Hasaka S, Francis T
Thin Solid Films, 520(8), 3175, 2012
7 Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layers
Shinriki M, Chung K, Hasaka S, Brabant P, He H, Adam TN, Sadana D
Thin Solid Films, 520(8), 3190, 2012
8 Solid-phase epitaxy of amorphous silicon films by in situ postannealing using RPCVD
Skibitzki O, Yamamoto Y, Schubert MA, Weidner G, Tillack B
Solid-State Electronics, 60(1), 13, 2011
9 Low temperature selective epitaxial growth of SiGe layers using various dielectric mask patterns and process conditions
Choi AR, Choi SS, Kim JT, Cho DH, Han TH, Shim KH
Applied Surface Science, 254(19), 6081, 2008
10 The influence of Si coverage in a chip on layer profile of selectively grown Si(1-x)Ge(x) layers using RPCVD technique
Kolahdouz M, Ghandi R, Hallstedt J, Osling M, Wise R, Wejtmans H, Radamson HH
Thin Solid Films, 517(1), 257, 2008