화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Laser surface texturing of beta-Ti alloy for orthopaedics: Effect of different wavelengths and pulse durations
Menci G, Demir AG, Waugh DG, Lawrence J, Previtali B
Applied Surface Science, 489, 175, 2019
2 Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges
Khazaka R, Bogumilowicz Y, Rouchon D, Boutry H, Chalupa Z, Lapras V, Previtali B, Chevalier N, Papon AM, David S, Maitrejean S
Applied Surface Science, 445, 77, 2018
3 Laser micropolishing of AISI 304 stainless steel surfaces for cleanability and bacteria removal capability
De Giorgi C, Furlan V, Demir AG, Tallarita E, Candiani G, Previtali B
Applied Surface Science, 406, 199, 2017
4 Sub-micrometric surface texturing of AZ31 Mg-alloy through two-beam direct laser interference patterning with a ns-pulsed green fiber laser
Furlan V, Biondi M, Demir AG, Pariani G, Previtali B, Bianco A
Applied Surface Science, 423, 619, 2017
5 Effect of Surface Texture on the Adhesion Performance of Laser Treated Ti6Al4V Alloy
Maressa P, Anodio L, Bernasconi A, Demir AG, Previtali B
Journal of Adhesion, 91(7), 518, 2015
6 FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration
Fenouillet-Beranger C, Previtali B, Batude P, Nemouchi F, Casse M, Garros X, Tosti L, Rambal N, Lafond D, Dansas H, Pasini L, Brunet L, Deprat F, Gregoire M, Mellier M, Vinet M
Solid-State Electronics, 113, 2, 2015
7 Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains
Hartmann JM, Benevent V, Barnes JP, Veillerot M, Lafond D, Damlencourt JF, Morvan S, Previtali B, Andrieu F, Loubet N, Dutartre D
Solid-State Electronics, 83, 10, 2013
8 Scaling of Trigate nanowire (NW) MOSFETs to sub-7 nm width: to Single Electron Transistor
Deshpande V, Barraud S, Jehl X, Wacquez R, Vinet M, Coquand R, Roche B, Voisin B, Triozon F, Vizioz C, Tosti L, Previtali B, Perreau P, Poiroux T, Sanquer M, Faynot O
Solid-State Electronics, 84, 179, 2013
9 Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs
Sklenard B, Batude P, Rafhay Q, Martin-Bragado I, Xu CQ, Previtali B, Colombeau B, Khaja FA, Cristoloveanu S, Rivallin P, Tavernier C, Poiroux T
Solid-State Electronics, 88, 9, 2013
10 Low temperature boron and phosphorous doped SiGe for recessed and raised sources and drains
Hartmann JM, Py M, Barnes JP, Previtali B, Batude P, Billon T
Journal of Crystal Growth, 327(1), 68, 2011