화학공학소재연구정보센터
검색결과 : 28건
No. Article
1 Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing
Abi-Tannous T, Soueidan M, Ferro G, Lazar M, Toury B, Beaufort MF, Barbot JF, Penuelas J, Planson D
Applied Surface Science, 347, 186, 2015
2 Understanding the growth of p-doped 4H-SiC layers using vapour-liquid-solid transport
Vo-Ha A, Carole D, Lazar M, Tournier D, Cauwet F, Souliere V, Thierry-Jebali N, Brosselard P, Planson D, Brylinski C, Ferro G
Thin Solid Films, 548, 125, 2013
3 Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE
Dheilly N, Planson D, Pagues G, Scharnholz S
Solid-State Electronics, 73, 32, 2012
4 4H-silicon carbide thin junction based ultraviolet photodetectors
Biondo S, Lazar M, Ottaviani L, Vervisch W, Le Borgne V, El Khakani MA, Duchaine J, Milesi F, Palais O, Planson D
Thin Solid Films, 522, 17, 2012
5 Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)
Lefranc P, Planson D, Morel H, Bergogne D
Solid-State Electronics, 53(9), 944, 2009
6 Edge termination strategies for a 4 kV 4H-SiC thyristor
Brosselard P, Planson D, Scharnholz S, Raynaud C, Zorngiebel V, Lazar M, Chante JP, Spahn E
Solid-State Electronics, 50(7-8), 1183, 2006
7 P-type SiC layers formed by VLS induced selective epitaxial growth
Lazar M, Jacquier C, Dubois C, Raynaud C, Ferro G, Planson D, Brosselard P, Monteil Y, Chante JP
Materials Science Forum, 483, 633, 2005
8 A 3.5 kV thyristor in 4H-SiC with a JTE periphery
Brosselard P, Bouchet T, Planson D, Scharnholz S, Paques G, Lazar M, Raynaud C, Chante JP, Spahn E
Materials Science Forum, 483, 1005, 2005
9 SiC-based current limiter devices
Chante JP, Tournier D, Planson D, Raynaud C, Lazar M, Locatelli ML, Brosselard P
Materials Science Forum, 457-460, 951, 2004
10 On-chip temperature monitoring of a SiC current limiter
Tournier D, Godignon P, Millan J, Planson D, Chante JP, Sarrus F, de Palma JF
Materials Science Forum, 457-460, 1021, 2004