1 |
Physico-Chemical Processes Induced by Electrical Breakdown and Discharge Responsible for Memory Effect in Krypton with < 10 ppm Nitrogen Pejovic MM, Pejovic MM, Stankovic K Plasma Chemistry and Plasma Processing, 38(2), 415, 2018 |
2 |
Contribution of statistical time delay and formative time to total electrical breakdown time delay in argon for different afterglow periods Pejovic MM, Pejovic MM Journal of Vacuum Science & Technology A, 26(5), 1326, 2008 |
3 |
Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs Aleksic SM, Jaksic AB, Pejovic MM Solid-State Electronics, 52(8), 1197, 2008 |
4 |
Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing Ristic GS, Pejovic MM, Jaksic AB Applied Surface Science, 252(8), 3023, 2006 |
5 |
Fowler-Nordheim high electric field stress of power VDMOSFETs Ristic GS, Pejovic MM, Jaksic AB Solid-State Electronics, 49(7), 1140, 2005 |
6 |
Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs Ristic GS, Pejovic MM, Jaksic AB Applied Surface Science, 220(1-4), 181, 2003 |
7 |
Surface Recombination in Breakdown Time-Delay Experiments - Effect of Different Cathode Materials Markovic VL, Pejovic MM, Petrovic ZL Plasma Chemistry and Plasma Processing, 16(2), 195, 1996 |
8 |
Surface Recombination of Atoms in a Nitrogen Afterglow Markovic VL, Petrovic ZL, Pejovic MM Journal of Chemical Physics, 100(11), 8514, 1994 |