화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Physico-Chemical Processes Induced by Electrical Breakdown and Discharge Responsible for Memory Effect in Krypton with < 10 ppm Nitrogen
Pejovic MM, Pejovic MM, Stankovic K
Plasma Chemistry and Plasma Processing, 38(2), 415, 2018
2 Contribution of statistical time delay and formative time to total electrical breakdown time delay in argon for different afterglow periods
Pejovic MM, Pejovic MM
Journal of Vacuum Science & Technology A, 26(5), 1326, 2008
3 Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs
Aleksic SM, Jaksic AB, Pejovic MM
Solid-State Electronics, 52(8), 1197, 2008
4 Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing
Ristic GS, Pejovic MM, Jaksic AB
Applied Surface Science, 252(8), 3023, 2006
5 Fowler-Nordheim high electric field stress of power VDMOSFETs
Ristic GS, Pejovic MM, Jaksic AB
Solid-State Electronics, 49(7), 1140, 2005
6 Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs
Ristic GS, Pejovic MM, Jaksic AB
Applied Surface Science, 220(1-4), 181, 2003
7 Surface Recombination in Breakdown Time-Delay Experiments - Effect of Different Cathode Materials
Markovic VL, Pejovic MM, Petrovic ZL
Plasma Chemistry and Plasma Processing, 16(2), 195, 1996
8 Surface Recombination of Atoms in a Nitrogen Afterglow
Markovic VL, Petrovic ZL, Pejovic MM
Journal of Chemical Physics, 100(11), 8514, 1994