화학공학소재연구정보센터
검색결과 : 78건
No. Article
1 An accurate expression to estimate the metal gate granularity induced threshold voltage variability in NWFETs
Vardhan PH, Ganguly S, Ganguly U
Solid-State Electronics, 152, 65, 2019
2 Interface state degradation during AC positive bias temperature instability stress
Kang SC, Kim SM, Jung U, Kim Y, Park W, Lee BH
Solid-State Electronics, 158, 46, 2019
3 Analytical modeling of metal gate granularity based threshold voltage variability in NWFET
Vardhan PH, Mittal S, Ganguly S, Ganguly U
Solid-State Electronics, 147, 26, 2018
4 Process modules for GeSn nanoelectronics with high Sn-contents
Schulte-Braucks C, Glass S, Hofmann E, Stange D, von den Driesch N, Hartmann JM, Ikonic Z, Zhao QT, Buca D, Mantl S
Solid-State Electronics, 128, 54, 2017
5 Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks
Xu M, Zhu HL, Zhang YB, Xu QX, Zhang YK, Qin CL, Zhang QZ, Yin HX, Xu H, Chen S, Luo J, Li CL, Zhao C, Ye TC
Solid-State Electronics, 129, 52, 2017
6 Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation
Kao TH, Chang SJ, Fang YK, Huang PC, Wang BC, Wu CY, Wu SL
Solid-State Electronics, 115, 7, 2016
7 Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device
Xu QX, Xu G, Zhou H, Zhu H, Liu J, Wang Y, Li J, Xiang J, Liang Q, Wu H, Zhong J, Xu M, Xu W, Ma X, Wang X, Tong X, Chen D, Yan J, Zhao C, Ye T
Solid-State Electronics, 115, 26, 2016
8 Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate
Xiang JJ, Zhang YB, Li TT, Wang XL, Gao JF, Yin HX, Li JF, Wang WW, Ding YQ, Xu CY, Zhao C
Solid-State Electronics, 122, 64, 2016
9 Characteristics of metal-gate metal-insulator-semiconductor capacitor with ZrN capping layer fabricated by high-power impulse magnetron sputtering
Tsai JR, Juan PC, Chen PJ
Thin Solid Films, 618, 55, 2016
10 Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs
Lin CY, Chang TC, Liu KJ, Tsai JY, Chen CE, Liu HW, Lu YH, Tseng TY, Cheng O, Huang CT
Thin Solid Films, 620, 30, 2016