화학공학소재연구정보센터
검색결과 : 33건
No. Article
1 Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE
Matta S, Brault J, Korytov M, Vuong TQP, Chaix C, Al Khalfioui M, Vennegues P, Massies J, Gil B
Journal of Crystal Growth, 499, 40, 2018
2 Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation
Damilano B, Vezian VS, Portail M, Alloing B, Brault J, Courville A, Brandli BV, Leroux M, Massies J
Journal of Crystal Growth, 477, 262, 2017
3 AIN interlayer to improve the epitaxial growth of SmN on GaN (0001)
Vezian S, Damilano B, Natali E, Al Khalfioui M, Massies J
Journal of Crystal Growth, 450, 22, 2016
4 Evidences of defect contribution in magnetically ordered Sm-implanted GaN
Lo FY, Guo JY, Huang CD, Chou KC, Liu HL, Ney V, Ney A, Chern MY, Shvarkov S, Reuter D, Wieck AD, Pezzagna S, Massies J
Current Applied Physics, 14, S7, 2014
5 Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes
Brault J, Damilano B, Kahouli A, Chenot S, Leroux M, Vinter B, Massies J
Journal of Crystal Growth, 363, 282, 2013
6 Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses
Moshe O, Rich DH, Damilano B, Massies J
Journal of Vacuum Science & Technology B, 28(4), C5E25, 2010
7 Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature
Cordier Y, Baron N, Chenot S, Vennegues P, Tottereau O, Leroux M, Semond F, Massies J
Journal of Crystal Growth, 311(7), 2002, 2009
8 AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?
Le Louarn A, Vezian S, Semond F, Massies J
Journal of Crystal Growth, 311(12), 3278, 2009
9 Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
Cordier Y, Azize M, Baron N, Bougrioua Z, Chenot S, Tottereau O, Massies J, Gibart P
Journal of Crystal Growth, 310(5), 948, 2008
10 Proceedings of the EMRS 2007 Fall Meeting Symposium H: Current Trends in Optical and X-Ray Metrology of Advanced Materials and Devices II, Warsaw, Poland
Servet B, Tomozeiu N, Modreanu M, Durand O, Jellison GE, Massies J
Thin Solid Films, 516(22), 7953, 2008