화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process
Claudel A, Blanquet E, Chaussende D, Boichot R, Doisneau B, Berthome G, Crisci A, Mank H, Moisson C, Pique D, Pons M
Journal of Crystal Growth, 335(1), 17, 2011
2 Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD
Claudel A, Blanquet E, Chaussende D, Boichot R, Martin R, Mank H, Crisci A, Doisneau B, Chaudouet P, Coindeau S, Pique D, Pons M
Journal of the Electrochemical Society, 158(3), H328, 2011
3 Regrowth of 3C-SiC on CMP treated 3C-SiC/Si epitaxial layers
Mank H, Moisson C, Turover D, Twigg M, Saddow SE
Materials Science Forum, 483, 197, 2005
4 Checker-board carbonization for control and reduction of the mean curvature of 3C-SiC layers grown on Si(100) substrates
Chassagne T, Ferro G, Haas H, Leycuras A, Mank H, Monteil Y
Materials Science Forum, 457-460, 265, 2004
5 Growth of GaN/AlN quantum dots on SiC(000(1)over-bar) by plasma-assisted MBE
Gogneau N, Fossard F, Monroy E, Monnoye S, Mank H, Daudin B
Materials Science Forum, 457-460, 1557, 2004
6 Growth of n-face polarity III-nitride heterostructures on C-face 4H-SiC by plasma-assisted MBE
Monroy E, Sarigiannidou E, Fossard F, Enjalbert F, Gogneau N, Bellet-Amalric E, Brault J, Rouviere JL, Dang LS, Monnoye S, Mank H, Daudin B
Materials Science Forum, 457-460, 1573, 2004
7 Direct growth of high quality GaN by plasma assisted molecular beam epitaxy on 4H-SiC substrates
Fossard F, Brault J, Gogneau N, Monroy E, Enjalbert F, Dang LS, Bellet-Amalric E, Monnoye S, Mank H, Daudin B
Materials Science Forum, 457-460, 1577, 2004
8 Photoluminescence of GaN/AlN quantum dots grown on SiC substrates
Fossard F, Gogneau N, Monroy E, Dang LS, Monnoye S, Mank H, Daudin B
Materials Science Forum, 457-460, 1593, 2004