화학공학소재연구정보센터
검색결과 : 335건
No. Article
1 Tunnel junction limited performance of InGaAsN/GaAs tandem solar cell
Dawidowski W, Sciana B, Zborowska-Lindert I, Mikolasek M, Kovac J, Tlaczala M
Solar Energy, 214, 632, 2021
2 Wafer-scale MOVPE growth and characterization of highly ordered h-BN on patterned sapphire substrates
Sundaram S, Li X, Alam S, Halfaya Y, Patriarche G, Ougazzaden A
Journal of Crystal Growth, 509, 40, 2019
3 Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
Hubacek T, Hospodkova A, Oswald J, Kuldova K, Pangrac J, Zikova M, Hajek F, Dominec F, Florini N, Komninou P, Ledoux G, Dujardin C
Journal of Crystal Growth, 507, 310, 2019
4 Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties
Zikova M, Hospodkova A, Pangrac J, Hubacek T, Oswald J, Kuldova K, Hajek F, Ledoux G, Dujardin C
Journal of Crystal Growth, 506, 8, 2019
5 Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer
Kanyandekwe J, Baines Y, Richy J, Favier S, Leroux C, Blachier D, Mazel Y, Veillerot M, Barnes JP, Mrad M, Wiese C, Charles M
Journal of Crystal Growth, 515, 48, 2019
6 Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques
Lopez-Escalante MC, Sciana B, Dawidowski W, Bielak K, Gabas M
Applied Surface Science, 433, 1, 2018
7 Solar tandem water splitting from efficient III-V photovoltaics: Implications of electrochemical surface activation
Munoz AG, Heine C, Hannappel T, Lewerenz HJ
Electrochimica Acta, 260, 861, 2018
8 Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy
Zhao W, Steidl M, Paszuk A, Bruckner S, Dobrich A, Supplie O, Kleinschmidt P, Hannappel T
Applied Surface Science, 392, 1043, 2017
9 Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires
Laurencikova A, Novotny I, Hasenohrl S, Derer J, Elias P, Kovac J, Kovac J, Dobrocka E, Novak J
Applied Surface Science, 395, 162, 2017
10 Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
Zikova M, Hospodkova A, Pangrac J, Oswald J, Hulicius E
Journal of Crystal Growth, 464, 59, 2017