화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD
Khosa RY, Chen JT, Palsson K, Karhu R, Hassan J, Rorsman N, Sveinbjornsson EO
Solid-State Electronics, 153, 52, 2019
2 Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing
Esakky P, Kailath BJ
Applied Surface Science, 413, 66, 2017
3 A Nonvolatile Memory Capacitor Based on a Double Gold Nanocrystal Storing Layer and High-k Dielectric Tunneling and Control Layers
Mikhelashvili V, Meyler B, Yofis S, Salzman J, Garbrecht M, Cohen-Hyams T, Kaplan WD, Eisenstein G
Journal of the Electrochemical Society, 157(4), H463, 2010
4 Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
Yoon SM, Park SHK, Byun CW, Yang SH, Hwang CS
Journal of the Electrochemical Society, 157(7), H727, 2010
5 Electrical Characterization of Tantalum Capacitors with Poly(3,4-ethylenedioxythiophene) Counter Electrodes
Freeman Y, Harrell WR, Luzinov I, Holman B, Lessner P
Journal of the Electrochemical Society, 156(6), G65, 2009
6 The electrical properties of MIS capacitors with ALN gate dielectrics
Adam T, Kolodzey J, Swann CP, Tsao MW, Rabolt JF
Applied Surface Science, 175, 428, 2001