화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides
Schimmel S, Kunecke U, Meisel M, Hertweck B, Steigerwald TG, Nebel C, Alt NSA, Schlucker E, Wellmann P
Journal of Crystal Growth, 456, 33, 2016
2 Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolution
Schimmel S, Lindner M, Steigerwald TG, Hertweck B, Richter TMM, Kunecke U, Alt NSA, Niewa R, Schlucker E, Wellmann PJ
Journal of Crystal Growth, 418, 64, 2015
3 Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applications
Zheng Q, Crocco J, Bensalah H, Wellmann P, Osvet A, Kunecke U, Dierre F, Vela O, Perez JM, Dieguez E
Journal of Crystal Growth, 381, 15, 2013
4 Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)(2) absorbers produced by rapid thermal processing
Kunecke U, Holzing A, Jost S, Lechner R, Vogt H, Heiss A, Palm J, Hock R, Wellmann P
Thin Solid Films, 535, 97, 2013
5 Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materials
Tang K, Kunecke U, Oehlschlager F, Holzing A, Schurr R, Hock R, Wellmann PW
Solar Energy Materials and Solar Cells, 94(11), 1875, 2010
6 Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions
Wellmann PJ, Straubinger TL, Desperrier P, Muller R, Kunecke U, Sakwe SA, Schmitt H, Winnacker A, Blanquet E, Dedulle JM, Pons M
Materials Science Forum, 483, 25, 2005
7 High Al-doping of SiC using a modified PVT (M-PVT) growth set-up
Muller R, Kunecke U, Weingartner R, Schmitt H, Desperrier P, Wellmann P
Materials Science Forum, 483, 31, 2005
8 Uniform axial charge carrier concentration in PVT-grown p-type 6H SiC by non-uniform distribution of boron in the powder source
Herro ZG, Bickermann M, Epelbaum BM, Weingartner R, Kunecke U, Winnacker A
Materials Science Forum, 457-460, 719, 2004
9 Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC
Weingartner R, Bickermann M, Herro Z, Kunecke U, Sakwe SA, Wellmann PJ, Winnacker A
Materials Science Forum, 433-4, 333, 2002
10 Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals
Bickermann M, Weingartner R, Herro Z, Hofmann D, Kunecke U, Wellmann PJ, Winnacker A
Materials Science Forum, 433-4, 337, 2002