화학공학소재연구정보센터
검색결과 : 47건
No. Article
1 Absorption coefficients of GeSn extracted from PIN photodetector response
Ye K, Zhang W, Oehme M, Schmid M, Gollhofer M, Kostecki K, Widmann D, Korner R, Kasper E, Schulze J
Solid-State Electronics, 110, 71, 2015
2 Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn
Oehme M, Kostecki K, Schmid M, Oliveira F, Kasper E, Schulze J
Thin Solid Films, 557, 169, 2014
3 Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes
Schmid M, Oehme M, Gollhofer M, Korner R, Kaschel M, Kasper E, Schulze J
Thin Solid Films, 557, 351, 2014
4 Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
Oehme M, Buca D, Kostecki K, Wirths S, Hollander B, Kasper E, Schulze J
Journal of Crystal Growth, 384, 71, 2013
5 Charge carrier traffic at self-assembled Ge quantum dots on Si
Kaniewska M, Engstrom O, Karmous A, Oehme M, Petersson G, Kasper E
Solid-State Electronics, 83, 99, 2013
6 Growth of silicon based germanium tin alloys
Kasper E, Werner J, Oehme M, Escoubas S, Burle N, Schulze J
Thin Solid Films, 520(8), 3195, 2012
7 Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si
Werner J, Oehme M, Schirmer A, Kasper E, Schulze J
Thin Solid Films, 520(8), 3361, 2012
8 Franz-Keldysh effect of germanium-on-silicon p-i-n diodes within a wide temperature range
Schmid M, Kaschel M, Gollhofer M, Oehme M, Werner J, Kasper E, Schulze J
Thin Solid Films, 525, 110, 2012
9 Local strained silicon platform based on differential SiGe/Si epitaxy
Karmous A, Oehme M, Werner J, Kirfel O, Kasper E, Schulze J
Journal of Crystal Growth, 324(1), 154, 2011
10 Germanium on Silicon Photodetectors with Broad Spectral Range
Oehme M, Kaschel M, Werner J, Kirfel O, Schmid M, Bahouchi B, Kasper E, Schulze J
Journal of the Electrochemical Society, 157(2), H144, 2010