화학공학소재연구정보센터
검색결과 : 268건
No. Article
1 Hydrogen sensing characteristics of AlGaInP/InGaAs enhancement/depletion-mode co-integrated doping-channel field-effect transistors
Tsai JH, Niu JS
International Journal of Hydrogen Energy, 44(3), 2053, 2019
2 Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
Lin KY, Wan HW, Chen KHM, Fanchiang YT, Chen WS, Lin YH, Cheng YT, Chen CC, Lin HY, Young LB, Cheng CP, Pi TW, Kwo J, Hong M
Journal of Crystal Growth, 512, 223, 2019
3 InGaAs quantum dots-in-a-well solar cells with anti-reflection coating
Lay TS, Lin ZH, Chuang KY, Tzeng TE
Journal of Crystal Growth, 513, 6, 2019
4 Degradation of up-grown metamorphic InGaP/InGaAs/Ge solar cells by low-energy proton irradiation
Guo HL, Shi LF, Sun Q, Zhang QM, Wu YY, Xiao JD, Guo B, Zhang YQ
Solar Energy Materials and Solar Cells, 191, 399, 2019
5 Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs
Zagni N, Puglisi FM, Pavan P, Verzellesi G
Solid-State Electronics, 159, 135, 2019
6 InGaP/InGaAs field-effect transistor typed hydrogen sensor
Tsai JH, Liou SH, Lin PS, Chen YC
Applied Surface Science, 432, 224, 2018
7 Effective Schottky barrier height lowering technique for InGaAs contact scheme: D-MIGS and D-it reduction and interfacial dipole formation
Kim SH, Kim GS, Kim SW, Yu HY
Applied Surface Science, 453, 48, 2018
8 Axial heterostructure of Au-catalyzed InGaAs/GaAs nanowires grown by metal-organic chemical vapor deposition
Yuan HB, Li L, Li ZJ, Wang Y, Qu Y, Ma XH, Liu GJ
Chemical Physics Letters, 692, 28, 2018
9 Near-Infrared Image Analysis as Tool for Monitoring Process Activities
Kubel-Heising F, Kunkel S, Medina I, Hien A, Schmitt L, Scholl S, Repke JU, Radle M
Chemie Ingenieur Technik, 90(6), 842, 2018
10 Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition
Lee WC, Cho CJ, Park SI, Jun DH, Song JD, Hwang CS, Kim SK
Current Applied Physics, 18(8), 919, 2018